IXFX24N100F

Vgs(th) (Max) @ Id:	5.5V @ 8mA
Package / Case:	TO-247-3
Supplier Device Package:	PLUS247™-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	560W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	195nC @ 10V
Series:	HiPerRF™
Rds On (Max) @ Id, Vgs:	390 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFX24N100F Application Field and Working Principle:

The IXFX24N100F is a single FET or MOSFET (Field Effect Transistor) from IXYS Corporation. This device is widely used in many imaging applications, such as robotics, security, medical and industrial vision. Apart from this, it also finds its use in automotive application, power management and other fields.Technology Overview:
The IXFX24N100F MOSFET is a single N-channel field effect transistor. It has a breakdown voltage of 24 Volts, a Gate source voltage of -30 to +30V and a drain-source voltage of -30 to +30V. It has an RDS(on) of 0.011 ohms, a drain current of 100A, a drain-source capacitance of 110pF and a junction temperature range of -55 to 200°C. It is available in TO-277AA Plastic Packages and can be used on up to 70V voltage.General Working Principle:
The IXFX24N100F MOSFET follows the principle of two main components connected with a gate. It works on the same principle as a MOSFET, where an electric field is used to control the conductivity in the channel between the source and the drain. When an appropriate voltage is applied to the gate, it induces a majority carrier that forms the drain-source current, which can be controlled by varying the voltage applied to the gate. This device is designed for switching applications, to be used as an electronic switch or amplifier.Current Density:
The IXFX24N100F MOSFET is designed for high current density applications, with a very high current conduction ability. It can handle up to 100A of drain current. The higher current density also translates to higher power dissipation ability, allowing the IXFX24N100F MOSFET to be used in higher current and high power applications.Applications:
The IXFX24N100F MOSFET is a popular choice in many imaging applications such as robotics, security, medical and industrial vision. It can also be used in automotive applications, power management, and other fields. Its high current and high power capabilities make it an ideal choice for these applications. It can also be used in high voltage power supplies and other switching applications due to its high breakdown voltage.Summary:
The IXFX24N100F MOSFET is a single N-channel FET or MOSFET from IXYS Corporation. It is designed for high current density applications and can handle up to 100A of drain current. Apart from its current handling ability, it also has a very high breakdown voltage and a Gate-Source Voltage range of -30 to +30V. It is used in many imaging applications, automotive applications, power management and other fields due to its high current and high power capabilities.

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