IXFX94N50P2 Allicdata Electronics
Allicdata Part #:

IXFX94N50P2-ND

Manufacturer Part#:

IXFX94N50P2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 94A PLUS247
More Detail: N-Channel 500V 94A (Tc) 1300W (Tc) Through Hole PL...
DataSheet: IXFX94N50P2 datasheetIXFX94N50P2 Datasheet/PDF
Quantity: 200
Stock 200Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Series: HiPerFET™, PolarHV™
Rds On (Max) @ Id, Vgs: 55 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFX94N50P2 is an enhancement mode vertical field-effect power transistor that is designed for use in power applications such as motor drives, power converters and UPSs. The device is housed in a hermetically sealed metal SIP package, making it ideal for audio and other critical applications. In this article, we will discuss the application field and working principle of the IXFX94N50P2.

The IXFX94N50P2 is a n-channel enhancement mode power MOSFET. It features a low RDS(on) and a high dV/dt operation, which makes it suitable for high current and high speed switching applications. Due to its low input capacitance, this device is also suitable for high frequency switching or high-speed circuit design. The device can be used in the following areas:

  • Power conversion and DC-AC inverters for renewable energy systems
  • DC-DC converters for automotive applications
  • Battery powered applications
  • Motor control applications
  • Load switching applications
  • Power supplies and UPSs

The IXFX94N50P2 is an enhancement mode field-effect transistor (FET). In the enhancement mode, it operates similar to a switch, with the gate being used to turn the channel on and off. When the gate potential is raised, the channel conducts and current starts to flow. When the gate potential is lowered, the channel is turned off, and the device experiences a low forward resistance.

The device is an HV IC power MOSFET, meaning that it has a high voltage rating. This allows it to operate in high voltage applications, such as power supplies and UPSs. Its low output capacitance enables it to operate at high switching frequencies.

The IXFX94N50P2 is a vertical DMOS transistor. This means that it has a vertical drift structure that allows it to handle large current. This makes it ideal for high power applications, such as power supplies and UPSs.

Due to its vertical structure, the IXFX94N50P2 is able to handle larger currents than standard MOSFETs while also dissipating less power. It also has a higher breakdown voltage, meaning that it is suitable for higher voltage applications.

In summary, the IXFX94N50P2 is a n-channel enhancement mode power MOSFET that is designed for use in high current, high voltage applications, such as power supplies and UPSs. It can also be used in high speed switching and high frequency circuit design applications. The device features a low RDS(on) and a high dV/dt operation, making it ideal for switching applications. Due to its vertical structure, it is able to handle larger currents than standard MOSFETs, while also dissipating less power.

The specific data is subject to PDF, and the above content is for reference

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