IXFX34N80

The IXFX34N80 is a structure of insulated chemical vapor deposition(ICVD) engineered MOSFET(metal-oxide-semiconductor field-effect transistor). It is widely used as a high-system bandgap, higher output capacity and higher switching speed of devices. Therefore, it is ideal for power management, automotive system and industrial fields. Hereby, this paper will introduce the application field and working principle of the IXFX34N80.

IXFX34N80 itself is a high-voltage power MOSFET, not only containing the features of higher cell density, fewer manufacture process steps, high thermal stability and high integration, but also playing an important role in energy-saving, integrate high-current and high-frequency energy. It is also distinguished in its ability of working in high frequency by its 15nH/150mA. Because of its development features, the IXFX34N80 is widely used in advanced power management, electric control and high-efficiency power switch applications.

From an electricl point of view, the IXFX34N80 contains a heat sink, an insulation gusset and a gate. As shown in Figure1. Firstly, sourced from the positive-side power supply connected to drain, electrons moves along electric currents between the drain and source, hereinafter form a channel. Then, the gate voltage changes the numbers of electrons in drain-source channel from high density to low density, thereby determining the resistance of the channel and controlling the flows of electric current. The heat sink can provide a low-resistance path for the thermal energy generated by the electron-motion.

Most importantly, drained current of the IXFX34N80 is less than the quoted value without any significant thermal losses. As a result, it is able to maintain higher output capacity and higher switching speed than other MOSFETs on market. For example, the drain current of IXFX34N80 is around 15A while the other MOSFETs have only only 10A.

In conclusion, IXFX34N80 is a high-charge power MOSFET with advanced energy-saving and integration abilities. It is particularly suitable for advanced power management and efficient power switch applications, while its high-performance features can help it perform satisfactionally at high frequency. Currently, it is widely used in automotive system, power management and industrial fields.