Allicdata Part #: | IXFX27N80Q-ND |
Manufacturer Part#: |
IXFX27N80Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 27A PLUS 247 |
More Detail: | N-Channel 800V 27A (Tc) 500W (Tc) Through Hole PLU... |
DataSheet: | IXFX27N80Q Datasheet/PDF |
Quantity: | 1000 |
Series: | HiPerFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 320 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 500W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
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The IXFX27N80Q is a type of transistor that falls within the core field of FETS, MOSFETs and single transistors. This type of transistor is composed of an insulated gate coupled to alternating layers of thin and thick oxides on a semiconductor substrate. This creates a device that can work as either an amplifier or a switch. Depending on some of the circuit properties and various regulating conditions, the IXFX27N80Q can also be used as a low-impedance voltage regulator. This makes it a very useful device for controlling DC power in circuits.
A FET (Field-effect Transistor) is a three-terminal transistor which consists of a source, a drain and a gate. The operation of the IXFX27N80Q relies on the control of its gate voltage, which accelerates the transporting of electrons through the silicon channel. That is done by applying Gate–Source voltage with positive potential, which attracts electrons to the drain. When the Gate–Source voltage gets negative, the electrons travel to the source instead.
The IXFX27N80Q has a Drain-Source breakdown voltage (also known as the avalanche voltage) of 800V, and a drain–source breakdown voltage of Drain-Source off-state Leakage of 10V maximum. This type of transistor also has a Drain–Source on-state resistance of 27 milliohm, or 2700 micomhos for maximum ratings. This leads to a high output current peak and high switching speed, which allows this device to operate efficiently even when it needs to handle substantial power load.
At the same time, the IXFX27N80Q is designed with a low and very precise on-resistance and low gate drive voltage, which allows it to be used in applications where low power consumption is essential. This type of transistor is also capable of providing excellent thermal performance efficiency when used at frequencies up to 100kHz. Finally, the IXFX27N80Q is also built with the ability to function at temperatures up to 125°C, further making it fit for different applications, such as in power modules, drive circuits and motor control units, among others.
In conclusion, the IXFX27N80Q is classified as a FET, as well as one of the most versatile and suitable transistors for switching and amplifier applications. Thanks to its wide range of galvanic isolation, low power consumption, high output current peak and outstanding thermal performance, this type of transistor is ideal for different types of circuits that require precise voltage regulating and high durability.
The specific data is subject to PDF, and the above content is for reference
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