IXFX25N90

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The IXFX25N90 is a high performance 25 V N-channel TrenchFET MOSFET made using IXYS Corporation’s proprietary advanced technology planar stripe and DMOS trench cell design. This device is designed to operate with either an ultra-low on-resistance of 2.5 Ω or an ultra-low gate charge of just 6 nC and a very low gate-source capacitance of 0.25 pF. IXFX25N90s are used in various applications ranging from high current, low voltage power management systems to mobile devices and other devices requiring efficient energy storage and high capacity switching.

The IXFX25N90 is a single TrenchFET MOSFET which utilizes the advantages of a number of different processes to optimize on-state resistance, gate charge, and capacitance for several applications. The structure of the device consists of a thin layer of polysilicon that is patterned to form gate fingers, source, and drain regions in a cross-sectional planar array. The electrically isolated TrenchFET cells are formed by etching deep trenches in the polysilicon layer which are filled with an N-type silicon.

The device’s on-state resistance is determined by the number of cells and the size of the trenches. The gate charge is dependent on the capacitance between the gate and source terminals. The gate-source capacitance is found to be significantly lower than in traditional MOSFET designs due to the very thin gate layer of IXFX25N90s. The on-state resistance and gate-source capacitance make the IXFX25N90 an ideal choice for high current, low voltage applications such as DC to DC converters, power supply controls, and motor control systems.

The IXFX25N90 also has very low output capacitance and gate-source capacitance which can be beneficial when used in high frequency applications such as switching DC to DC converters and switching power supplies. The low output capacitance makes the IXFX25N90 a great choice for voltage-controlled oscillators and other circuits that require fast switching speeds. The low gate-source capacitance makes the device ideal for high frequency, low voltage applications such as auto-ranging DC to DC converters.

The IXFX25N90 provides design engineers with the ability to build high frequency and low voltage switching power supplies and other circuits with low output capacitance and high efficiency. Its low on-resistance and gate-source capacitance make the device ideal for applications requiring greater power management efficiency. The IXFX25N90 can be used in various applications, from motor control systems to high current low and high voltage power management systems.

The IXFX25N90 combines advanced technology manufacturing processes with advanced packaging to provide consistent electrical performance in a wide range of applications. Its performance characteristics, flexibility, and ease of use make the IXFX25N90 an ideal solution for those requiring a reliable, high current and low voltage switching FET with low output capacitance and high efficiency.

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