Allicdata Part #: | IXFX44N80Q3-ND |
Manufacturer Part#: |
IXFX44N80Q3 |
Price: | $ 19.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 44A PLUS247 |
More Detail: | N-Channel 800V 44A (Tc) 1250W (Tc) Through Hole PL... |
DataSheet: | IXFX44N80Q3 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 18.03140 |
Series: | HiPerFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 6.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 9840pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1250W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
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.Transistors are semiconductor devices which can be used to amplify electrical signals or to switch between some forms of energy. The IXFX44N80Q3 is a type of Insulated Gate Field Effect Transistor (IGFET) which is often used in applications that require high levels of isolation between the input and output. This particular device is an N-Channel Enhancement Mode type which is capable of delivering very fast switching times.
The most basic form of an IGFET consists of two metal terminals, a gate and a substrate, both of which are oxidized so as to prevent them from coming into contact with each other. The current flow between the two terminals is controlled by the voltage applied to the gate terminal. If a positive voltage is applied to the gate, the transistor will be switched on and current will be allowed to flow between the two terminals.
The IXFX44N80Q3 is able to deliver fast switching times due to its low gate capacitance. This feature makes it ideal for use in high-speed digital circuit applications such as audio amplifiers, modulators, and switches. Additionally, it has low gate threshold voltage and low gate resistance, meaning that it can operate at very low voltages, allowing it to be used in battery powered applications.
The IXFX44N80Q3 also has a wide range of voltage and current ratings, enabling it to be used in a variety of applications. Its high breakdown voltage and low on-state resistance means that it is able to provide high power dissipation, making it suitable for power applications, such as voltage regulation, motor control, and power supplies. In addition, its relatively low noise makes it suitable for signal conditioning, high-speed communications, and control systems.
In terms of working principle, the IXFX44N80Q3 works in a similar way to traditional FETs. When a voltage is applied to the gate, it causes an electric field to appear around the two terminals. This field is able to repel electrons from the source and drain terminals, allowing them to pass through the oxide layer of the gate, and thus allowing current to flow between the two terminals.
Due to its versatile nature, the IXFX44N80Q3 can be used in a wide range of applications. From providing voltage regulation, or switching high-voltage circuits, to signal conditioning and noise reduction, this device is able to provide useful features and performance that can be tailored to meet the specific requirements of the application.
The specific data is subject to PDF, and the above content is for reference
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