IXFX12N90Q

The IXFX12N90Q is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Infineon Technologies. It is a 900V, 12A, N-channel devices and part of the OptiMOS™ series.

Application of IXFX12N90Q

The IXFX12N90Q MOSFET is designed for use on a wide range of applications, including power supplies, motor control, server and telecom power systems, consumer electronics, automotive and industrial automation.

In power supplies, the IXFX12N90Q MOSFET can be used as a main switch, preventing excess energy from being transferred to potentially damaging components. It can also be used as a synchronous rectifier, allowing for smoother and more efficient power transfer. In motor control, the IXFX12N90Q MOSFET enables accurate speed control and efficient operation. It is also a suitable choice for server and telecom power systems, as it is able to handle the high voltage and power requirements.

In consumer electronics, the IXFX12N90Q MOSFET is used to enable power efficient operation and increased performance. It is also used in automotive and industrial automation, providing control and increased efficiency in these applications.

Working Principle of IXFX12N90Q

The IXFX12N90Q MOSFET works by using an electric field to control the flow of electrons. It consists of an N-type drain region, P-type source region, gate electrode, and gate oxide. When a positive voltage is applied to the gate electrode, an electric field is created which attracts electrons from the N-type drain region, causing the N-type region to become increasingly negative. This increases the amount of current that is allowed to flow between the drain and source, making the device conductive. When the voltage is removed, the electric field is removed and the device returns to its non-conductive state.

To increase the current capacity of the IXFX12N90Q, the gate oxide can be increased or the gate voltage increased. By increasing the gate oxide, the electric field is increased and more electrons are attracted to the N-type region, resulting in a higher current capacity. By increasing the gate voltage, the electric field is also increased, making it easier for electrons to be attracted.

Conclusion

The IXFX12N90Q MOSFET from Infineon Technologies is a 900V, 12A, N-channel device suitable for a wide range of applications. It works by creating an electric field between the drain and source regions, allowing for current to flow between them. The current capacity can be increased by increasing the gate oxide or the gate voltage.