| Allicdata Part #: | IXFX90N20Q-ND |
| Manufacturer Part#: |
IXFX90N20Q |
| Price: | $ 10.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 90A PLUS247 |
| More Detail: | N-Channel 200V 90A (Tc) 500W (Tc) Through Hole PLU... |
| DataSheet: | IXFX90N20Q Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 9.78432 |
| Vgs(th) (Max) @ Id: | 4V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | PLUS247™-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 45A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXFX90N20Q is a field effect transistor (FET) designed for a wide range of applications. It is a type of MOSFET, a type of FET where current is carried by electrons or holes between the source and drain leads, through the use of an electric field. The IXFX90N20Q is a type of single MOSFET, meaning that it has a single conducting channel between the source and drain terminals. This particular transistor can be used in both high and low power applications, making it highly versatile.
The IXFX90N20Q is primarily used in the power switching industry, and is often employed as a switch in power converters and inverters. It can also be used in low frequency converters and synchronous rectifiers, as well as in battery chargers and power supplies. Its low threshold voltage and on-resistance make it well suited for this type of application. When used in a converter or inverter, the IXFX90N20Q is usually utilized as a power switch in the main bridge section of the device.
The IXFX90N20Q also finds employment in high frequency power conversion applications. Its high switching frequency capabilities make it well suited for a variety of switching tasks in DC-DC converters and other applications. In addition, due to its low RDSon value, the device is often used as a driver or gate element in switching power supplies.
The IXFX90N20Q is a voltage-controlled device. This means that it operates by having its gate voltage altered. When the gate voltage is in the “on” state, current is allowed to flow from the source to the drain. When the gate voltage is in the “off” state, current is prevented from flowing from the source to the drain. By varying the gate voltage, the IXFX90N20Q can be used to regulate the current flow in a circuit. It typically operates in either the linear mode or the saturation mode.
The IXFX90N20Q is a robust and reliable device, and is highly durable in the most demanding applications. It has a high current carrying capability, as well as a wide temperature range, making it well suited for a variety of different environments. Additionally, it is a low power consumption device, which helps to reduce power consumption and heat dissipation in high-density applications.
Overall, the IXFX90N20Q is an extremely versatile and reliable MOSFET device. It is well suited to a variety of applications, including power switching, power conversion, and high frequency power conversion. Its robust construction, wide temperature range, and low power consumption make it an excellent choice for a variety of different applications. As a single MOSFET, it is highly capable of providing reliable, low power operation.
The specific data is subject to PDF, and the above content is for reference
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IXFX90N20Q Datasheet/PDF