IXFX360N15T2

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Introduction

The IXFX360N15T2 is a standard insulated-gate field-effect transistor (IGFET), also known as a metal-oxide-semiconductor field-effect transistor (MOSFET). It is designed for power applications.

IGFETs characteristics

IGFETs are unipolar, voltage-operated devices. They use a gate voltage to control current flow between the drain and source. The gate is insulated from the other two terminals, and has very low current leakage.

IGFETs are typically used as switches or amplifiers due to their ability to rapidly switch on and off. They are widely used in power applications where larges amounts of current need to be switched, are reliable and have low power losses.

IXFX360N15T2

The IXFX360N15T2 is a N-Type MOSFET with a breakdown voltage of 15 volts. This means it can be used in power replacing bipolar junction transistors (BJT) in boost converters, and hence is suitable for a wide range of switch-mode power supplies and power electronic applications.

The IXFX360N15T2 uses a N-channel MOSFET which has low power losses due to the low gate voltage needed to drive current compared to that of BJTs. The device is equipped with built-in parasitic body diodes and ESD protection, making it suitable for applications with high levels of switching noise.

Working principle

The IXFX360N15T2 is a voltage-controlled device. A positive voltage is applied to the gate, which attracts electrons from a “p-type” semiconductor body into the n-type channel, forming a conducting path between the source and drain. Current flows from the source to the drain as a result.

The device switches off when the gate-source voltage drops to zero volts. This repels the electrons back into the body, breaking the connection between the source and drain and preventing current flow.

Application fields

The IXFX360N15T2 has a wide range of applications in the field of power electronics, including:

• Automotive and telecommunication systems, such as electric vehicles and high-speed internet.
• Switching power supplies, UPS, and energy storage applications like batteries and solar systems.
• Industrial applications, such as robotics, process control, and high-voltage power supplies.
• Renewable energy applications, such as solar and wind turbines.

The IXFX360N15T2 is also an ideal device for general purpose switching applications, as it is reliable, efficient and capable of carrying high current levels. It is also a cost-effective alternative to bipolar junction transistors (BJTs) for these applications.

Conclusion

The IXFX360N15T2 is a standard insulated-gate field-effect transistor (IGFET) designed for power applications. It has a breakdown voltage of 15 volts and is suitable for a wide range of switch-mode power supplies, process control and renewable energy systems. It is an efficient, cost-effective and reliable alternative to bipolar junction transistors (BJTs) for switching applications.

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