Allicdata Part #: | IXFX30N50Q-ND |
Manufacturer Part#: |
IXFX30N50Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 30A PLUS247 |
More Detail: | N-Channel 500V 30A (Tc) 416W (Tc) Through Hole PLU... |
DataSheet: | IXFX30N50Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 416W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3950pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFX30N50Q is a type of Field Effect Transistor (FET) manufactured by International Rectifier (IR). It is a Surface Mounted Device (SMD) designed for high-frequency applications. The FET has a maximum drain current rating of 30A and a maximum drain-source voltage rating of 500V. It is used in a wide range of applications such as power management, motor control and switching.
A FET is basically an electronic switch and operates by controlling the current flow using an electric field. This electric field is applied to the conductive channel between the source and drain terminals of the FET. It is capable of controlling large currents using small signals and can be used as amplifiers as well. FETs can be divided into two types, enhancement type and depletion type.
The IXFX30N50Q is an enhancement type FET. It is unique in that it has a single-die construction, which means that the N-channel FET and the P-channel FET are formed on a single die. This results in improved heat dissipation, making it suitable for high power applications. The device also features a low gate charge and low gate input capacitance, which allows for faster switching speeds.
The IXFX30N50Q has a wide range of applications such as power management, motor control and switching. It can be used in a variety of circuit designs and is particularly suitable for higher power applications due to its single-die construction. It can also be used in audio amplifiers, switching voltage regulators and DC-DC converters.
To sum up, the IXFX30N50Q is a high-power Field Effect Transistor (FET) manufactured by International Rectifier (IR). It is an enhancement-type FET with a single-die construction for improved heat dissipation, low gate charge and low gate input capacitance which allows for faster switching speeds. It has a wide range of applications such as power management, motor control and switching.
The specific data is subject to PDF, and the above content is for reference
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