| Allicdata Part #: | IXFX44N55Q-ND |
| Manufacturer Part#: |
IXFX44N55Q |
| Price: | $ 15.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 550V 44A PLUS247 |
| More Detail: | N-Channel 550V 44A (Tc) 500W (Tc) Through Hole PLU... |
| DataSheet: |  IXFX44N55Q Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 13.94820 |
| Series: | HiPerFET™ |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 550V |
| Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 120 mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6400pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 500W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PLUS247™-3 |
| Package / Case: | TO-247-3 |
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IXFX44N55Q is an n-channel enhancement mode power field effect transistor. It is a high voltage FET, also known as a metal oxide semiconductor field effect transistor. This device’s power dissipation rating is 200W and its drain-source breakdown voltage is 200V. It has very low on-resistance and features a maximum operating temperature of 125 degrees Celsius. IXFX44N55Q has a limited ability to amplify input currents, making it a suitable option for high voltage applications that require current gain control.
IXFX44N55Q can be used for linear audio amplifiers, switching circuits, and DC-DC converters. It can be used for applications such as DC-DC converters, switch mode power supplies, lighting controls, and other high-power electronic circuits. Its high voltage rating and low on-resistance make it an ideal choice for applications that require a low voltage drop and a high power dissipation rating.
The working principle of IXFX44N55Q involves using a gate terminal to control the current flow between the source and drain terminals. The voltage applied to the gate terminal determines the current flow between the other two terminals. When a voltage of 0V is applied to the gate terminal, the junction between the source and the drain is completely pinched off and the current flow stops. When a voltage greater than the threshold voltage of the FET is applied to the gate terminal, the junction between the source and the drain is opened and the current is allowed to flow through.
In summary, IXFX44N55Q is an enhancement-mode n-channel FET. It has a high voltage rating of 200V and a low on-resistance that makes it suitable for high power applications that require current gain control. Common applications of this device include linear audio amplifiers, switching circuits, and DC-DC converters. The working principle of IXFX44N55Q involves using a gate terminal to control the current flow between the source and drain terminals.
The specific data is subject to PDF, and the above content is for reference
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