IXFX40N90P

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Field-effect transistors (FETs) are four-terminal devices classified as either unipolar (source, drain, gate and body) or bipolar (source, drain, gate and substrate). Metal-oxide-semiconductor field-effect transistors (MOSFETs) are a type of unipolar transistor used in high frequency applications.

The IXFX40N90P is an insulated gate bipolar transistors (IGBTS) with integrated vertical MOSFETs components used in high heat power applications such as power supplies, UPS systems, motor control inverters and point of sale systems. It uses an insulated gate bipolar technology (IGBT) that combines metal-oxide-semiconductor field-effect transistors (MOSFET) with bipolar junction transistors (BJTs) to optimize power losses. The IXFX40N90P features a high blocking voltage of 900V and a low saturation voltage of 2.2V, making it suitable for applications requiring high voltage and power.

The IXFX40N90P consists of two elements, the vertical MOSFET (VFET) and the vertical bipolar junction transistor (VBJT). The VFET section consists of two N-Channel MOSFETs (NMOS) in series and out-of-phase with each other. This arrangement reduces the body or the total parasitic capacitance of both the MOSFETs and the gate-to-drain capacitance. The body and gate are divergently connected to the substrate, reducing the thermal resistance. The result is a device with high switching speeds and low on-state voltages. The VBJT section consists of two PNP transistors connected in series, which increase the load current efficiency. The combined transistor sections, VFET and VBJT, reduce power losses.

To operate the IXFX40N90P, a voltage must be applied to the gate terminal, which changes the amount of current flowing through the drain and the source. The IXFX40N90P acts as a current regulator, allowing the user to control the amount of current flowing through the device by varying the gate voltage. The IXFX40N90P is ideal for applications requiring high current, low on-state voltage, and high speed switching. It is suitable for high heat applications such as fast switching applications like UPS system, motor control, and high density power supplies.

The IXFX40N90P is well suited for use in applications with high speed power supplies and motor control inverters. The device features a high blocking voltage of 900V and low saturation voltage of 2.2V, making it suitable for applications requiring high power but also high speed switching. It is designed to reduce power losses in applications such as uninterruptible power supplies, motor control inverters and point-of-sale systems. Its combination of vertical MOSFETs and bipolar junction transistors makes it suitable for applications requiring both high current and high speed switching.

The IXFX40N90P is an insulated gate bipolar transistor that is specifically designed for high heat power applications. It features an integrated vertical metal-oxide-semiconductor field-effect transistor and bipolar junction transistors that reduce power losses. This transistor device can be used in power supplies, UPS systems, motor control inverters and POS systems. It features a high blocking voltage and low saturation voltage, making it suitable for applications requiring high current and high speed switching.

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