IXGT10N170A Discrete Semiconductor Products |
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Allicdata Part #: | IXGT10N170A-ND |
Manufacturer Part#: |
IXGT10N170A |
Price: | $ 4.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1700V 10A 140W TO268 |
More Detail: | IGBT NPT 1700V 10A 140W Surface Mount TO-268 |
DataSheet: | IXGT10N170A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
30 +: | $ 4.10886 |
Specifications
Power - Max: | 140W |
Base Part Number: | IXG*10N170 |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 850V, 10A, 22 Ohm, 15V |
Td (on/off) @ 25°C: | 46ns/190ns |
Gate Charge: | 29nC |
Input Type: | Standard |
Switching Energy: | 380µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 6V @ 15V, 5A |
Current - Collector Pulsed (Icm): | 20A |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Description
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Introduction
The IXGT10N170A is an insulated-gate bipolar transistor (IGBT) designed for use in high-power, high-voltage applications. With its low on-resistance and high switching speed, it offers reliable performance in demanding environments. It is particularly suited to applications that require high current carrying capacity and fast switching speeds, such as power electronics and motor control.Application Field
The IXGT10N170A can be used in a range of high-power, high-voltage applications, including general motor control, welding, HVAC, AC and DC motor controls, renewable energy, wind and solar power, DC to AC inverters, and UPS, as well as charging and static transfer systems. Due to its wide voltage range and zero turn-on voltage, the IXGT10N170A is also suitable for use in a variety of automotive, industrial, and other energy-oriented applications.Design of IGBT
The IXGT10N170A is an Insulated Gate Bipolar Transistor (IGBT) designed with a planar technology. It features an isolated gate structure and built-in reverse protection that protects the chip from high-current surges and extra-high voltages. The IXGT10N170A is designed with a PNP collector-emitter structure and a gate driver for improved gate control. It has two high power terminals as well as a resistor for over-current protection.Working Principle
The IXGT10N170A is a 4-layer semiconductor structure composed of an N-type and P-type layer. When a negative gate voltage is applied to the gate, current flows from the P-type collector to the N-type emitter through the channel formed by the N-type layer. This creates a low-resistance channel and thus allows current to flow. When there is no gate voltage, the channel is off and very little current can flow.The IXGT10N170A has a wide voltage range, low on-state voltage, and a fast switching speed that allows it to be used in a range of applications. Its fast switching speed also allows it to remain in the off-state for longer periods of time, thus helping reduce power consumption.Conclusion
The IXGT10N170A is an insulated-gate bipolar transistor designed for high-power, high-voltage applications. It is highly suitable for applications that require high current carrying capacity and fast switching speeds, such as power electronics and motor control. The IXGT10N170A has a wide voltage range, low on-state voltage, fast switching speed, and built-in reverse protection for extra-high voltages that makes it perfect for use in a variety of different applications. It is an ideal choice for a range of automotive, industrial, and other energy-oriented applications.The specific data is subject to PDF, and the above content is for reference
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