IXGT25N160 Allicdata Electronics
Allicdata Part #:

IXGT25N160-ND

Manufacturer Part#:

IXGT25N160

Price: $ 7.54
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1600V 75A 300W TO268
More Detail: IGBT NPT 1600V 75A 300W Surface Mount TO-268
DataSheet: IXGT25N160 datasheetIXGT25N160 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 6.85314
Stock 1000Can Ship Immediately
$ 7.54
Specifications
Power - Max: 300W
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 84nC
Input Type: Standard
Switching Energy: --
Series: --
Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 1600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGT25N160 is a single IGBT transistor manufactured by Infineon Technologies. It is ideal for applications requiring high-speed switching and is commonly used in power electronics such as motor control, induction heating, home appliances, uninterruptible power supplies, and railway applications. The IXGT25N160 is based on Infineon\'s advanced IGBT chip technology, which delivers excellent switching characteristics and optimized output power.

The IXGT25N160 features a minimum turn-on voltage of 700V, a maximum turn-off voltage of 6V, and a maximum collector current of 160A. It also has a fast switching speed of up to 1750V/us, which makes it a great choice for applications that need to respond quickly. It also has a low thermal resistance of just 2.3 K/W, helping it to stay cool even under high temperature conditions.

In addition to its high switching speeds, the IXGT25N160 also offers excellent short-circuit performance and reliability. Its fast diode recovery time prevents any excessive current from flowing to the IGBT, and its high current carrying capacity ensures low voltage drops and energy losses. The IXGT25N160 also has a high surge current capability, which makes it ideal for extreme environmental conditions.

The IXGT25N160\'s working principle is simple and straightforward. When the gate voltage is applied to its gate electrode, it triggers the switching of the IGBT. The gate voltage will cause the electrons in the gate region to move to the emitter, causing the depletion region to expand. This expansion will reduce the gate resistance and form an inversion layer between the emitter and collector, allowing current to flow from the collector to the emitter.

The IXGT25N160 has many advantages over other types of IGBT transistors. These include an improved heat transfer for improved thermal performance, the ability to handle very high switching frequencies and high current surge, and low power consumption. Additionally, the use of Infineon\'s advanced chip technology allows for improved switching characteristics, higher power handling capabilities, and better reliability.

The IXGT25N160 is a great choice for many applications where high-speed switching and reliability are both important considerations. With its fast switching speed, low thermal resistance, and high current-carrying capacity, this IGBT transistor is an excellent option for any demanding power electronics application.

The specific data is subject to PDF, and the above content is for reference

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