IXGT60N60 Discrete Semiconductor Products

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The IXGT60N60 is a single insulated gate bipolar transistor (IGBT) that offers a high input impedance, a low on-resistance (RDS(on)) and a high current rating in a single package. It is an ideal choice for high performance switching applications such as motor control, power supply, power conversion, and solar inverter applications.

Features

• High input impedance
• Ultra-low gate voltage
• Ultra-low RDS(on)
• High-current rating
• Surface mount availability

Applications

The IXGT60N60 is a versatile IGBT that is suitable for a range of applications, from motor control and power supply to power conversion and solar inverter applications. It is designed to be used at frequencies up to 1MHz and can be used in applications such as Class-D audio amplifiers, BLDC motor drives, DC–DC converters, and phase-shifted full bridges. It is also an ideal choice for aerospace applications, particularly in aircraft power conditioning systems.

Working Principle

The IXGT60N60 is a single insulated gate bipolar transistor (IGBT). IGBTs are three-terminal power semiconductor devices used as switches in DC, AC, and pulse power application. An IGBT combines a BJT\'s low on-state voltage with the high switching frequencies of MOSFETs. The basic working principle of IGBTs can be explained by their four switching states: On, Off, Saturation, and Cutoff.

In the ‘On’ state, the gate is applied with a low voltage, typically between 4 and 5 volts. This voltage activates the base of the MOSFET, which allows conduction between the source and the drain. This allows current to pass through the IGBT, which results in it turning ‘On’. In the ‘Off’ state the gate is connected to the emitter, which prevents current conduction between the source and the drain. This forces the IGBT to switch ‘Off’. In the ‘Saturation’ state the voltage is such that the IGBT is biased on virtually irrespective of the gate voltage applied. In the ‘Cutoff’ state the voltage is such that the IGBT is biased off virtually irrespective of the gate voltage applied.

The IXGT60N60 is a low on-resistance IGBT, meaning it can handle high currents, resulting in less voltage drop across the power transistor. The low on-resistance also allows for faster switching speeds and improved thermal performance. This makes the IXGT60N60 particularly suitable for motor control and power conversion applications.

Conclusion

The IXGT60N60 is a single insulated gate bipolar transistor (IGBT) that offers a high input impedance, a low on-resistance (RDS(on)) and a high current rating in a single package. It is an ideal choice for high performance switching applications such as motor control, power supply, power conversion, and solar inverter applications. It is designed to be used at frequencies up to 1MHz and is suitable for a range of applications, from motor control and power supply to power conversion and solar inverter applications.

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