IXGT28N60BD1 Allicdata Electronics
Allicdata Part #:

IXGT28N60BD1-ND

Manufacturer Part#:

IXGT28N60BD1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 40A 150W TO268
More Detail: IGBT 600V 40A 150W Surface Mount TO-268
DataSheet: IXGT28N60BD1 datasheetIXGT28N60BD1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Input Type: Standard
Base Part Number: IXG*28N60
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 480V, 28A, 10 Ohm, 15V
Td (on/off) @ 25°C: 15ns/175ns
Gate Charge: 68nC
Series: --
Switching Energy: 2mJ (off)
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Current - Collector Pulsed (Icm): 80A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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Transistors - IGBTs - Single - IXGT28N60BD1 application field and working principle

The IXGT28N60BD1 is a high performance, short-circuit robust IGBT, designed to provide efficient power conversion in low voltage applications. This IGBT offers protection from overvoltage and reverse-current stress, making it ideal for applications such as power supplies, photovoltaic inverters, motor drives, welding machines, UPS, and lighting.

The IXGT28N60BD1 is based on the highly reliable IGBT technology (Insulated Gate Bipolar Transistor) which combines the low on-state performance of a MOSFET with the switching characteristics of a bipolar transistor. The IXGT28N60BD1 combines a planar IGBT with an innovative power module design that allows excellent thermal performance, fast switching speeds, wide safe operating area, and short circuit robustness.

Working Principle

An IGBT works essentially the same as a regular BJT (bipolar junction transistor). Both use a base-collector-emitter structure. The main difference between the two is that the IGBT uses a thin layer of insulated oxide between the base and collector contacts. This oxide layer allows for a much larger current flow between the base and collector than would be possible with a BJT, which only allows for a very small current flow.

In order for the IGBT to switch on, a small voltage is applied to the gate-cathode contact. This voltage causes the oxide layer to become polarized, which in turn attracts and attracts the minority carrier electrons from the collector. This causes a buildup of charge at the gate-collector junction. As the voltage increases, the polarized gate-collector junction breaks down and allows current to travel from the collector to the emitter.

When the voltage is decreased, the electrons are no longer attracted and the charge builds up again, stopping the current flow. This process is repeated each time the voltage is applied, allowing the IGBT to switch back and forth rapidly and with ease. The advantage of this design is that the device can handle very high voltages and currents with relatively low power dissipation.

Application Field

The IXGT28N60BD1 provides a broad application range with a wide variety of low voltage applications. It is ideal for use in power supplies, photovoltaic inverters, motor drives, welding machines, UPS, and lighting. It is also widely used in automotive components such as starter motors, battery charges, alternators, and power steering. The IXGT28N60BD1 has been tested and approved by TUV, guaranteeing its reliability and performance in extreme conditions.

Due to its high-speed switching capability, low power dissipation, and short-circuit robustness, the IXGT28N60BD1 provides excellent performance in low voltage applications. It can be used in a wide range of applications, from motor drives to car starters, and is a reliable, efficient, and cost-effective solution for any low voltage application.

The specific data is subject to PDF, and the above content is for reference

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