Allicdata Part #: | IXGT28N120BD1-ND |
Manufacturer Part#: |
IXGT28N120BD1 |
Price: | $ 6.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 50A 250W TO268 |
More Detail: | IGBT PT 1200V 50A 250W Surface Mount TO-268 |
DataSheet: | IXGT28N120BD1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 5.53770 |
Specifications
Switching Energy: | 2.2mJ (off) |
Base Part Number: | IXG*28N120 |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 40ns |
Test Condition: | 960V, 28A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 30ns/210ns |
Gate Charge: | 92nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 3.5V @ 15V, 28A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 50A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Description
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Introduction
The IXGT28N120BD1 is a high voltage insulated gate bipolar transistor (IGBT). It is a member of the IGBT family, which is a type of transistor with a unique combination of characteristics that make them ideal for use in many different applications. In this article we will discuss the application field and working principle of the IXGT28N120BD1.Application Field
The IXGT28N120BD1 is used in a variety of applications, including motor control, inverter drives, and power converters. Its primary application is in motor control, where it is used to regulate current flow and voltage to optimize motor performance. The IGBT can also be used in inverter drives, where it is used as a switch to regulate voltage and current. Finally, it can be used in power converters, where it helps to convert alternating current to direct current.Working Principle
The working principle of the IXGT28N120BD1 is based on the principles of electron flow. When the gate is opened, electrons can flow through the channel formed by the three terminals of the transistor. The drain terminal is positively charged, which creates an electric field that attracts the electrons towards the drain terminal. The amount of current that flows through the transistor is regulated by the gate voltage, which controls the number of electrons that can flow through the transistor.Conclusion
The IXGT28N120BD1 is a high voltage insulated gate bipolar transistor (IGBT). It is used in a variety of applications such as motor control, inverter drives, and power converters. The working principle of the IXGT28N120BD1 is based on the principles of electron flow, where the amount of current that flows through the transistor is regulated by the gate voltage. With its unique combination of characteristics, the IXGT28N120BD1 is an ideal solution for many different types of applications.The specific data is subject to PDF, and the above content is for reference
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