IXGT16N170

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IXGT16N170 is a high-voltage insulated gate bipolar transistor (IGBT) manufactured by IXYS. It is a single IGBT module offering superior performance for high power applications such as switch mode power supplies, photovoltaic inverters, motor drives, and welding machines. The IXGT16N170 has a nominal VCE of 1700V, a maximum collector-emitter voltage VCE(max) of 1750V, a collector current of 16A at 25°C, and an exceptional temperatures rating ranging -40°C to +110°C.

IGBTs are 3-terminal power semiconductor devices that are preferred rectifiers and switches due to their low intrinsic gate turn-off time and relatively low gate drive power requirements. It offers higher switching frequencies, higher efficiency, and superior control during short circuit conditions. It can drive beyond the harsh limits of IGBTs. The IXGT16N170 can handle high switching frequencies and rapid voltage transitions, allowing for higher power density ratings and more efficient operation.

In comparison to conventional bipolar transistors and other power semiconductor devices, the IXGT16N170 IGBT offers superior functionality and reliability. The module has a low on-state resistance of 2000V, a maximum gate charge of 100V, and a gate current rating of 10mA which further improves transfer efficiency. Additionally, the device has a breakdown voltage of 2000V and can handle a surge current of up to 32A.

The IXGT16N170 IGBT is designed to perform high speed, fast switching operations and can be used in various power conversion applications. Its high voltage switching capability makes it ideal for loads with high impedance and high power requirements, such as those found in motor drives, solar inverters, high-frequency power supplies and welding machines.

The working principle of the IXGT16N170 IGBT is based on the “MOSFET-IGBT integration” concept. This concept basically combines the features of a MOSFET and an IGBT, creating a power device that operates like a MOSFET but with superior performance compared to an IGBT. The device uses two main switching elements, the IGBT and the MOSFET, to control the power flows. The IGBT conductors form a vertical N-channel structure which is sandwiched between two P-channel layers that are stacked one above the other to create a transistor. When a gate voltage is applied to the bottom P-channel side and the top N-channel side, the structure becomes electrically conductive, allowing current to flow.

The IXGT16N170 IGBT also has an internal EMI filter which reduces the electromagnetic interference generated by the device and thus optimizes the performance of the application. Additionally, the device does not require a separate cooling system and can handle high current levels.

Overall, the IXGT16N170 IGBT is an excellent option for high power and fast switching applications, offering excellent performance and reliability. The device has a unique MOSFET-IGBT integration concept which ensures reliable power delivery, and its high voltage switching capabilities enable a wide range of applications. It is well suited to be used in a variety of power conversion systems such as motor drives, photovoltaic inverters and welding machines.

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