IXGT32N90B2 Allicdata Electronics
Allicdata Part #:

IXGT32N90B2-ND

Manufacturer Part#:

IXGT32N90B2

Price: $ 3.80
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 900V 64A 300W TO268
More Detail: IGBT PT 900V 64A 300W Surface Mount TO-268
DataSheet: IXGT32N90B2 datasheetIXGT32N90B2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 3.45303
Stock 1000Can Ship Immediately
$ 3.8
Specifications
Power - Max: 300W
Base Part Number: IXG*32N90
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 720V, 32A, 5 Ohm, 15V
Td (on/off) @ 25°C: 20ns/260ns
Gate Charge: 89nC
Input Type: Standard
Switching Energy: 2.6mJ (off)
Series: HiPerFAST™
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 64A
Voltage - Collector Emitter Breakdown (Max): 900V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGT32N90B2 is a type of Insulated Gate Bipolar Transistor—or IGBT for short. IGBTs belong to a family of power transistors that are used in control and switching applications. This particular IGBT has characteristics that make it well-suited for use in single-phase inverter and motor control applications, such as in home appliances, industrial and entertainment appliances, automation systems, and HVAC systems.

An IGBT is a type of power transistor that combines the features of both a bipolar and a field-effect transistor. It is constructed by combining two vertical layers of silicon with a thin wall of insulating material between them. One of the main advantages of an IGBT over a regular transistor is that it is capable of conducting large amounts of current while withstanding higher voltage levels. Additionally, the speed at which IGBTs can switch between on and off states is much faster than that of traditional bipolar transistors.

The IXGT32N90B2 has a voltage rating of 900V, a surge blocking voltage capacity of 1.8KV, and a forward current rating of 0.4mA. It has an excellent forward-through capability, and its low on-state resistance produces an efficient switching performance. The IXGT32N90B2 also has a wide selection of breakdown and blocking voltages, which makes it suitable for a variety of applications.

The IXGT32N90B2 works by controlling the flow of current through the device. When the IGBT is turned on, current flows from the Gate (G) to the Collector (C). This transistor can also be turned off by reversing the flow of current. When the Gate-Emitter (G-E) voltage is below the rated DC breakdown voltage, the IGBT is off and no current can flow through it.

In addition to its excellent power handling characteristics, the IXGT32N90B2 also has a power dissipation rating of 30W and a maximum junction temperature rating of 175C. Its current transfer ratio ranges from 1A @ Vge = 2V to 32A @ Vge = 12V. Additionally, the IXGT32N90B2 is equipped with special protection against static electricity, making it suitable for use in a variety of environments.

The IXGT32N90B2 is the perfect choice for single-phase inverters and motor control applications. Its extremely low on-state resistance provides for efficient switching and its wide range of voltages make it suitable for a variety of applications. Its wide current transfer ratio and excellent power handling capabilities make it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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