IXGT20N60B

Switching Energy:	150µJ (on), 700µJ (off)
Base Part Number:	IXG*20N60
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C:	15ns/150ns
Gate Charge:	90nC
Input Type:	Standard
Series:	HiPerFAST™
Power - Max:	150W
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 20A
Current - Collector Pulsed (Icm):	80A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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The IXGT20N60B Device Structure and Working Principle

The IXGT20N60B is an Insulated Gate Bipolar Transistor (IGBT) with an average current of 20A and a current rating of up to 60A. It is rated for a total power dissipation of up to 600W, and is offered in an insulated pack- a 3-pin package designed to reduce dissipated power in applications that require switching or switching at high frequencies.

Applications

The IXGT20N60B offers a variety of applications due to its versatile characteristics. The IXGT20N60B is often used in power systems such as solar panels, motors, inverters, and power supplies, as well as circuits that require high frequency switching. It is capable of high frequency switching, meaning it can switch a load at high frequency, usually greater than 20kHz. This makes it ideal in high speed and low noise digital circuits, because it minimizes the noise that can be generated. Due to its high dissipation rates and short switching times, it is commonly used in control circuits that require a high level of power control and switching accuracy. This makes it ideal for robotics, industrial motion control, and machine control circuits. Furthermore, its high level of performance and low power consumption makes it suitable for applications where energy efficiency is essential. It is often used in entertainment systems, home automation, and embedded systems.

Device Structure

The IXGT20N60B is constructed with the highest quality materials and modern technology. This device has three distinct regions, the emitter, the base and the collector.The emitter is divided into two sections, the anode and the cathode, which collect the signals and pass them to the base. The base is a thin layer of semiconductor material which is connected to the main circuit. The collector is a metal plate which is used to dissipate heat and protect the device from any excess voltage or current. This device also includes a gate which is used to control the conduction of current through the device.

Working Principle

The IXGT20N60B operates on a voltage-controlled principle. When a gate voltage is applied to it, the emitter-base junction enters into a conducting state and current begins to flow through the device. This current flow is what is used to control the load. The device operates in two different modes. In the cut-off mode, the Gate voltage is such that, no current flows between the emitter and collector. This mode makes the device ideal for high frequency switching, as it can quickly switch loads on and off. In the saturation mode, the Gate voltage is such that, current begins to flow between the emitter and collector. This mode is suitable for applications that require a high level of power control and switching accuracy. In addition to the voltage-controlled operation, the IXGT20N60B also includes a built-in temperature control feature. This temperature control feature is designed to reduce the current flow and reduce the dissipated power in applications where switching or switching at high frequencies is required. This helps to extend the life-span of the device by preventing it from exceeding its rated maximum temperature. Overall, the IXGT20N60B is a versatile and efficient device that offers a variety of applications due to its highly efficient characteristics and low dissipation rates. It is capable of high frequency switching and is suitable for applications that require a high level of power control and switching accuracy, due to its temperature control feature.

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