IXGT28N60B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXGT28N60B is an Insulated-Gate Bipolar Transistor (IGBT) designed to operate in power electronic systems. It is part of IXYS’s mid-power IGBT HyperFast series. This device offers high switching speed and low switching losses. This advanced IGBT technology is housed in a RoHS compliant To-3PF package and optimized for switching frequency and current conduction.The IXGT28N60B is intended for use in applications such as solar inverters, AC motor drives, switch-mode power supplies and UPSs. It features an anti-parallel fast recovery diode, allowing the user to reduce the number of components needed in the circuit. The IGBT utilizes an insulated gate with an internal structure that controls the electrical current between two electrodes. The two electrodes are the collector and the emitter. The applied voltage to the gate turns on or off the current between the two electrodes. When the signal to the gate is low (less than 2V), the IGBT is in its off state. When the signal to the gate is high (greater than 2V), it is turned on in a conducting state. The signal to the gate must reach a minimum threshold voltage in order to turn the IGBT on or off the correct way.When compared to the traditional bipolar junction transistor (BJT), the IGBT has many advantages. One major advantage of using IGBT is the reduction of power loss. An IGBT can handle much higher voltage and can switch faster than a BJT due to its structure. The IGBT is also more efficient because it creates less power loss when it is in its on or off state. Another advantage of the IGBT is that it has the capability to improve cooling in power circuits. For example, when more current runs through the IGBT for a certain period of time, less heat is generated in comparison to BJT, which increases the number of cycles and reduces the overall power consumption of the circuit.In terms of response times, IGBTs can provide a much faster response time than traditional transistors. When the signal to the gate increases from a low to a high voltage, the transition from the off state to the on state (and vice versa) occurs faster. This allows the IGBT to respond to changes in the circuit quicker, resulting in improved system performance.Finally, IGBTs enable power switching at higher frequencies than BJTs due to their internal structure. This makes it possible to control a wider range of frequencies simultaneously with better accuracy and reliability.TheIXGT28N60B is an excellent choice for applications that require high frequency switching with low power losses. Its internal structure and design provide users with the optimal combination of switching speed and performance. The IGBT is robust and resistant to overload and thermal stress, making it a reliable device for any power electronic application.

The specific data is subject to PDF, and the above content is for reference