| Allicdata Part #: | IXTA05N100-ND |
| Manufacturer Part#: |
IXTA05N100 |
| Price: | $ 2.68 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 0.75A TO-263 |
| More Detail: | N-Channel 1000V 750mA (Tc) 40W (Tc) Surface Mount ... |
| DataSheet: | IXTA05N100 Datasheet/PDF |
| Quantity: | 20 |
| 1 +: | $ 2.68000 |
| 10 +: | $ 2.59960 |
| 100 +: | $ 2.54600 |
| 1000 +: | $ 2.49240 |
| 10000 +: | $ 2.41200 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 17 Ohm @ 375mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 750mA (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTA05N100 is a field-effect transistor (FET) usually used in digital and linear power-control circuits. It is highly efficient, due to its dynamic nature and high switching speed. As a result, it is a versatile component in the power electronics industry, used in applications such as motor control, heating control, lighting control, and various other similar industrial applications.
The IXTA05N100 is a single-gate device, meaning it has only one electrical contact and gate terminal that allows electrical current to flow or be diverted through the component. This type of device helps in the control of current flow and is helpful in improving system efficiency as well as reduction of component losses.
Their working principle is based on the effect of an electric field on a semiconductor material. The component essentially consists of a channel through which current flows, the gate terminal, and an insulating layer between them. When a positive voltage is applied to the gate terminal, an electric field is created which draws in electrons, making more of them available for current conduction; conversely, if a negative voltage is applied, the electric field pushes away electrons, reducing the current that flows. Thus, the gate voltage can be used to control the amount of current that flows through the component, allowing precise control and regulation of electrical current.
The IXTA05N100 is commonly found in motor-control and heating-control applications, due to its dynamic nature and precise current control. Its working principle is based on the application of an electric field to the channel of the component and the control of the electrons\' movement by the gate voltage. This is what allows precise and efficient control of electrical current, leading to improved system performance and energy efficiency.
In addition, the IXTA05N100 can also be used in various other applications such as lighting control, fan speed control, LED lighting control, and even power supply regulation. Its robust construction and easy-to-use design make it a great solution for applications where precise current adjustment is required for improved efficiency.
Overall, the IXTA05N100 FET is a versatile component, highly efficient, and easy-to-use. Its ability to control and regulate current makes it a highly useful component for a variety of applications. With its introduction, the power electronics industry has taken a step forward in improvement of efficiency and cost-effectiveness.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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IXTA05N100 Datasheet/PDF