| Allicdata Part #: | IXTA380N036T4-7-ND |
| Manufacturer Part#: |
IXTA380N036T4-7 |
| Price: | $ 2.21 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH |
| More Detail: | N-Channel 36V 380A (Tc) 480W (Tc) Surface Mount TO... |
| DataSheet: |  IXTA380N036T4-7 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.98878 |
| Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
| Supplier Device Package: | TO-263-7 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 480W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13400pF @ 25V |
| Vgs (Max): | ±15V |
| Series: | TrenchT4™ |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 1 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 380A (Tc) |
| Drain to Source Voltage (Vdss): | 36V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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The IXTA380N036T4-7 is a N-Channel MOSFET transistor made specifically for low current applications. It features low input capacitance and fast switching speed, making it suitable for a variety of electronic applications.
The IXTA380N036T4-7 features a low voltage gate threshold and an ultra low static drain-source on-resistance. This makes it ideal for use in battery-powered applications, including power management and portable applications. The IXTA380N036T4-7 also offers an excellent gate-body charge (Quiescent Drain current) of only 1nA. This ensures low power consumption and long battery life.
The IXTA380N036T4-7 also has a small package size and low input capacitance which reduces overall circuit complexity. This makes it suitable for a large range of applications, including cell phone audio power amplifiers, biasing circuits, LED drivers, and motor controls.
The IXTA380N036T4-7 operates on an enhanced version of the p-channel MOSFET principle called the E-mode MOSFET. This provides enhanced performance for challenging applications. It also eliminates the need for expensive custom devices.
The E-mode MOSFET structure of the IXTA380N036T4-7 works by using the N-channel MOSFET body to control the transistor\'s threshold voltage. The body is connected to the P-channel, providing enhanced performance with low current levels. This improves efficiency and increases the performance of the device in high-voltage and high-current applications.
In addition, the IXTA380N036T4-7 has a relatively large breakdown voltage. This makes it suitable for many high-consumption applications, such as high-current or high-voltage applications.
Overall, the IXTA380N036T4-7 is an ideal transistor for low-current applications, such as cell phone audio power amplifiers, LED drivers, and motor controls. It features an ultra low static drain-source on-resistance, E-mode MOSFET structure for enhanced performance, a low voltage gate threshold, low input capacitance, and a relatively large breakdown voltage. All of these features make the IXTA380N036T4-7 an excellent choice for a variety of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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