| Allicdata Part #: | IXTA02N450HV-ND |
| Manufacturer Part#: |
IXTA02N450HV |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 4500V 0.2A TO263 |
| More Detail: | N-Channel 4500V 200mA (Tc) 113W (Tc) Surface Mount... |
| DataSheet: | IXTA02N450HV Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 6.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 113W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 256pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 750 Ohm @ 10mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Tc) |
| Drain to Source Voltage (Vdss): | 4500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IXTA02N450HV is a kind of p-channel metal-oxide semiconductor field-effect transistor (MOSFET). As a part of the IHPT & IHTX series 2V VGS 20V high voltage MOSFETs, it features excellent performance for high power switching applications. Moreover, IXTA02N450HV offers very low Gate Charge making it an ideal choice for high speed switching.
The IXTA02N450HV is especially used for high-speed and high-power switching applications, as it can handle a drain-source voltage of up to 20V, and a continuous drain current up to 3A. It has a low gate charge that enables high switching speed and ensures low losses in power dissipation. The IXTA02N450HV is an effective and reliable MOSFET in the effort of building power conversion systems, including the design of power densities and heat transfer.
The working principle of the IXTA02N450HV is simple and straightforward. It is a voltage controlled switch, which means that when a voltage is applied to the Gate terminal of the transistor, it turns on and allows current to flow from the Source to the Drain. When the voltage is removed, the transistor turns off and this prevents current from flowing between the Source and Drain. This turn-on/turn-off action is controlled by the applied voltage, so it is relatively easy to use the transistor for high-speed switching applications.
The construction of the IXTA02N450HV is also relatively simple and straightforward. It typically consists of two parts, a base region and a control region. The base region is a vertical structure in which electrons are injected into the base region from the drain terminal. This injection of electrons forms an electric field in the base region which affects the conductivity of the device. The control region consists of a highly doped semiconductor material which acts as a cap to prevent electrons from escaping from the base region.
The IXTA02N450HV is widely used in applications such as switching power supplies, motor drives, and lighting control. It is also used in circuits where fast switching times and higher power dissipation are required. In addition, it is also used in a variety of digital circuits, such as logic gates and flip-flops, as its very low switching losses ensure that it is low energy and energy efficient.
In conclusion, IXTA02N450HV is a high performance MOSFET that is well suited for high power and high speed switching applications. It provides excellent performance with very low gate charge and is suitable for a variety of circuit designs. Its construction is simple and straightforward, making it an ideal choice for those who need a versatile and reliable switching component.
The specific data is subject to PDF, and the above content is for reference
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IXTA02N450HV Datasheet/PDF