Allicdata Part #: | IXTA36N20T-ND |
Manufacturer Part#: |
IXTA36N20T |
Price: | $ 1.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 36A TO-263 |
More Detail: | N-Channel 200V 36A (Tc) Surface Mount TO-263 (IXT... |
DataSheet: | IXTA36N20T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.63019 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXTA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXTA36N20T transistors are widely used in many application fields, due to their high reliability, low power consumption and high efficiency. They are classified as Single FETs and MOSFETs.
The IXTA36N20T transistor is an insulated gate Field Effect Transistor (FET) with a P-Channel Metal Oxide Semiconductor (MOS). It is designed to be used in a wide range of applications such as power amplifiers, power conversion systems, key-controlled switch networks, and low noise amplifiers. The IXTA36N20T is a low voltage, low power source transistor with an operating voltage rating of less than 35V, a maximum current rating of up to 18A. It is also equipped with on-chip protection diodes that are designed to protect against high current flows.
The IXTA36N20T transistors usually come with a package type TO-220AB that is designed to dissipate heat. The device also provides short-circuit protection and is protected against the effects of electrostatic discharge. Additionally, it has a low gate-drain capacitance, hence a fast switching speed, making it an ideal choice for high speed switching applications.
IXTA36N20T transistors work on the principle of avalanche breakdown. In this process, an avalanche breakdown of the gate-source voltage takes place and changes the type of the transistor from a weak P-type to a strong N-type. During the avalanche breakdown, electrons are attracted towards the gate and holes are expelled towards the source, thereby changing the type of the transistor. This change results in a low electrical resistance in the transistor due to the low gate-drain capacitance, thus allowing current to flow through the transistor.
To adjust the current in the transistor, the gate voltage of the IXTA36N20T has to be adjusted. The higher the gate voltage, the higher the current. The gate voltage can also be adjusted by using a digital control system. This allows the current to be accurately controlled, making it an ideal choice for precision applications.
IXTA36N20T transistors are popular among a wide range of applications, such as analog and digital circuit designs, DC-DC power conversion circuits, motor controllers, and audio amplifier designs. They are also used in automotive, home appliances, and industrial applications.
IXTA36N20T transistors offer high reliability and low power consumption, making them a popular choice for many applications. The high performance and long-term reliability of the IXTA36N20T makes it an ideal choice for any application requiring superior performance.
The specific data is subject to PDF, and the above content is for reference
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