IXTA130N10T7 Allicdata Electronics
Allicdata Part #:

IXTA130N10T7-ND

Manufacturer Part#:

IXTA130N10T7

Price: $ 1.85
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 130A TO-263-7
More Detail: N-Channel 100V 130A (Tc) 360W (Tc) Surface Mount T...
DataSheet: IXTA130N10T7 datasheetIXTA130N10T7 Datasheet/PDF
Quantity: 1000
50 +: $ 1.66270
Stock 1000Can Ship Immediately
$ 1.85
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTA130N10T7 is an Enhanced N-Channel MOSFET (ENFET) which combines both depletion and enhancement modes of conduction in the same device. This makes it a suitable choice in applications requiring accommodation to both types of operations. Apart from a mature and well-structured internal structure, this ENFET also brings a wide range of application areas where load driving and signal amplification can be accomplished in a very efficient manner.

Application Fields of IXTA130N10T7 ENFET

IXTA130N10T7 ENFETs can be used in several different application areas. It is capable of controlling low side mosfet switching to provide for accurate control in motor control applications such as water pumps, solenoid valves and the like. It is also used in automotive and military applications where it provides an ideal choice for load driving and signal amplification. Furthermore, it can be used in LED lighting, Audio Amplifiers, automotive lighting systems and a range of other applications.

How IXTA130N10T7 Works

IXTA130N10T7 ENFETs can operate in both depletion and enhancement mode. As a depletion mode transistors it can be used to switch low voltage circuits in order to control current and voltage when a negative gate voltage is provided. The internal source-drain resistance is described by the the equation VDSR = I/beta in depletion mode and VGS = 0.

As an enhancement mode device it can be used to drive large currents. It offers high peak current and low on resistance which allows it to efficiently control and direct current to loads or other circuits. The internal source-drain resistance is also described by the equation VDSR = I/beta in enhancement mode. A VGS exceeding the threshold voltage is necessary in order to activate the device.

IXTA130N10T7 Features

IXTA130N10T7 ENFETs device offers a variety of features that makes it suitable for a wide range of applications. It has a VGS(th) voltage range of -3 V to -8 V and an RDS(on) of 0.015 Ω. These features ensure that the device can efficiently control and direct current to the load within a wide range of conditions. Furthermore, it features an enhanced PWM control performance, low thermal resistance and low gate charge.

Conclusion

The IXTA130N10T7 ENFET is an ideal solution for a wide range of applications such as motor control, LED lighting, Audio Amplifiers and automotive lighting systems. Its advanced internal structure and features facilitates the efficient control of current and voltage. Furthermore, it can operate in both enhancement and depletion modes, offering the right solution in different applications where load driving and signal amplification is necessary.

The specific data is subject to PDF, and the above content is for reference

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