Allicdata Part #: | IXTA130N10T7-ND |
Manufacturer Part#: |
IXTA130N10T7 |
Price: | $ 1.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 130A TO-263-7 |
More Detail: | N-Channel 100V 130A (Tc) 360W (Tc) Surface Mount T... |
DataSheet: | IXTA130N10T7 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.66270 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5080pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA130N10T7 is an Enhanced N-Channel MOSFET (ENFET) which combines both depletion and enhancement modes of conduction in the same device. This makes it a suitable choice in applications requiring accommodation to both types of operations. Apart from a mature and well-structured internal structure, this ENFET also brings a wide range of application areas where load driving and signal amplification can be accomplished in a very efficient manner.
Application Fields of IXTA130N10T7 ENFET
IXTA130N10T7 ENFETs can be used in several different application areas. It is capable of controlling low side mosfet switching to provide for accurate control in motor control applications such as water pumps, solenoid valves and the like. It is also used in automotive and military applications where it provides an ideal choice for load driving and signal amplification. Furthermore, it can be used in LED lighting, Audio Amplifiers, automotive lighting systems and a range of other applications.
How IXTA130N10T7 Works
IXTA130N10T7 ENFETs can operate in both depletion and enhancement mode. As a depletion mode transistors it can be used to switch low voltage circuits in order to control current and voltage when a negative gate voltage is provided. The internal source-drain resistance is described by the the equation VDSR = I/beta in depletion mode and VGS = 0.
As an enhancement mode device it can be used to drive large currents. It offers high peak current and low on resistance which allows it to efficiently control and direct current to loads or other circuits. The internal source-drain resistance is also described by the equation VDSR = I/beta in enhancement mode. A VGS exceeding the threshold voltage is necessary in order to activate the device.
IXTA130N10T7 Features
IXTA130N10T7 ENFETs device offers a variety of features that makes it suitable for a wide range of applications. It has a VGS(th) voltage range of -3 V to -8 V and an RDS(on) of 0.015 Ω. These features ensure that the device can efficiently control and direct current to the load within a wide range of conditions. Furthermore, it features an enhanced PWM control performance, low thermal resistance and low gate charge.
Conclusion
The IXTA130N10T7 ENFET is an ideal solution for a wide range of applications such as motor control, LED lighting, Audio Amplifiers and automotive lighting systems. Its advanced internal structure and features facilitates the efficient control of current and voltage. Furthermore, it can operate in both enhancement and depletion modes, offering the right solution in different applications where load driving and signal amplification is necessary.
The specific data is subject to PDF, and the above content is for reference
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