Allicdata Part #: | IXTA152N085T-ND |
Manufacturer Part#: |
IXTA152N085T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 85V 152A TO-263 |
More Detail: | N-Channel 85V 152A (Tc) 360W (Tc) Surface Mount TO... |
DataSheet: | IXTA152N085T Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 152A (Tc) |
Drain to Source Voltage (Vdss): | 85V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXTA152N085T is a type of field-effect transistor (FET). It has a single gate and can be used to control a small amount of voltage and current. The IXTA152N085T is manufactured by IXYS Integrated Circuits Division. It is a low cost, small footprint FET that is widely used in commercial, automotive, and consumer applications.
The IXTA152N085T is a N-channel enhancement mode FET. It is designed with a single n-type drain that is connected to the source via a shorted gate-drain junction. This configuration allows it to efficiently control voltage and current in a variety of applications. The FET can be used for switching, level shifting, and voltage/current regulation.
The IXTA152N085T is designed to operate from a minimum temperature of -65°C to a maximum temperature of 150°C. It has an on-resistance of 290mΩ and a threshold voltage of -4.8V. The IXTA152N085T utilizes a very low input capacitance and is ideal for low voltage/current applications. It can withstand a maximum voltage of 800V and a maximum current of 10A. The FET also has a low gate-drain capacitance and a low gate-drain leakage current, making it suitable for high frequency applications.
The IXTA152N085T is ideal for a variety of applications, including power conversion, DC-DC converters, motor control, digital and analog circuits, filter circuits, and RF circuits. It can be used to control voltage and current in a wide range of applications such as solar power systems, electric vehicle chargers, and battery management systems. The FET can also be used to protect sensitive circuits from overloads and short-circuits.
The IXTA152N085T is designed to function using two main principles. The first principle is the gate-source voltage (VGS) principle. This is when the transistor is driven with a positive gate-source voltage and the drain-source current flows according to the applied voltage and the channel resistance. This is the main principle used to regulate the current in the circuit. The second principle is the gate-drain voltage (VGD) principle. This is when the transistor is driven with a negative gate-drain voltage and the current is cut-off. This is mainly used to switch the FET on and off.
In conclusion, the IXTA152N085T is a versatile, low-cost, and small-footprint FET that is ideal for a variety of applications. It is designed with a single n-type drain that is connected to the source via a shorted gate-drain junction. The IXTA152N085T utilizes two main principles, the gate-source voltage (VGS) principle and the gate-drain voltage (VGD) principle. This allows it to efficiently control voltage and current in power conversion, motor control, and a number of other applications. It is a reliable and cost-efficient transistor that is suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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