| Allicdata Part #: | IXTA1R6N100D2-ND |
| Manufacturer Part#: |
IXTA1R6N100D2 |
| Price: | $ 1.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 1.6A D2PAK |
| More Detail: | N-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount ... |
| DataSheet: |  IXTA1R6N100D2 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.41284 |
Specifications
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 645pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 10 Ohm @ 800mA, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IXTA1R6N100D2 application field and working principle covers one of the latest models of the Insulated Gate Bipolar Transistor. Known as a Power MOSFET, the IXTA1R6N100D2 works by using components of both a MOSFET and a bipolar transistor in order to provide the ideal combination of performance and value in an easy-to-use package. This MOSFET is widely used in various applications, such as power and consumer electronics.The IXTA1R6N100D2 is a N-channel MOSFET with an extremely low gate voltage drop. This helps to reduce any loss of energy that could be experienced during the switching process, making it ideally suited for use in power circuitry. Furthermore, it is able to provide an extremely efficient switching by utilizing the Schottky–Gettering Method in order to drastically reduce the amount of power consumed.The IXTA1R6N100D2 is a highly versatile, low-voltage MOSFET. This makes it suitable for a wide range of applications, from consumer to automotive and industrial use. It also has a maximumon resistance (RDS(on)) of only 0.17 Ω, meaning it is able to operate at very high currents with very low losses. This makes it ideal for use in power switching applications, such as in motor control, DC-DC converters, and UPSs.In terms of its working principle, the IXTA1R6N100D2 works in the same manner as any other MOSFET. When an electric field is applied to the gate terminal of the device, the current flow between the drain and source terminals is increased, allowing for the device to be used as a switch. The current-carrying capacity of the device is determined by the channel width, channel length, and channel resistance, which are all factors that can be adjusted and optimized depending on the application.In conclusion, the IXTA1R6N100D2 is one of the latest models of MOSFETs which offers an efficient and reliable solution for a wide range of applications. Its low voltage drop and low resistance make it perfect for high-current applications, such as motor control and DC-DC converters. Furthermore, its ability to be manipulated with parameters such as channel width and channel length make the IXTA1R6N100D2 an incredibly versatile device and one that can be used in almost any electronic scenario.
The specific data is subject to PDF, and the above content is for reference
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