Allicdata Part #: | IXTA38N15T-ND |
Manufacturer Part#: |
IXTA38N15T |
Price: | $ 1.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 38A TO-263 |
More Detail: | N-Channel 150V 38A (Tc) Surface Mount TO-263 (IXT... |
DataSheet: | IXTA38N15T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.39469 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXTA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IXTA38N15T is an n-type, enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by IXYS Corporation. This device is designed to be used in a wide range of applications, such as switching, sensing, amplifying, speed control and interfacing digital logic. IXTA38N15T is a surface-mount transistor, which means that it can be soldered directly on a printed circuit board for use in smaller, more compact designs. It has a maximum drain-source voltage of -38 volts and a maximum drain-source current of -15 amps.
The IXTA 38N15T has a number of unique features that make it an ideal choice for many potential applications. One of the key features of this device is its low on-state resistance (RDS), which provides for low power dissipation, improved efficiency, and lower heat generation. This makes it an ideal choice for applications where power savings and efficiency are key concerns. The IXTA 38N15T also offers excellent thermal stability and surge capability, making it suitable for applications that require the protection of sensitive components.
The operating principle behind the IXTA 38N15T is similar to that of other transistors, such as the BJT. It consists of four terminals: the source, gate, drain and substrate. By applying a voltage to the gate terminal, a field is created between source and drain that results in a flow of electrons (current) between the two terminals. This current flow is largely determined by the resistance (RDS) between the source and drain.
The gate terminal acts like a switch allowing current to flow between the source and drain. Depending on the type of FET, the gate can either be made to turn on (enhancement mode) or off (depletion mode). The IXTA 38N15T is an enhancement mode MOSFET, which means that the gate must be brought to a positive voltage in order to turn the transistor on. Decreasing the voltage applied to the gate results in a decrease in current flowing between the drain and source.
The IXTA 38N15T can be used in a variety of applications, including but not limited to, switching, sensing, amplifying, line drivers, and speed control. It is also suitable for interfacing digital logic and can be used in mobile, consumer, automotive, industrial, and medical applications. Due to its low on-state resistance and excellent thermal stability, the IXTA 38N15T is an ideal choice for applications where power savings and efficiency are key concerns.
The specific data is subject to PDF, and the above content is for reference
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