IXTA160N10T7

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The IXTA160N10T7 is a high-performance MOSFET transistor designed for power applications. It is designed for high frequency and high current operation. It is built on a Fast Intrinsic Diode (FID) technology, which enables fast switching speeds and low power consumption. It has a maximum drain-source voltage of 160V and a peak drain current of 10A. This makes it ideal for high-efficiency power supplies, automotive and industrial applications.

A MOSFET is a type of transistor that acts as a switch. It consists of four layers of materials (source, gate, drain and body) on an insulated layer called the substrate. The source and drain are located at opposite ends of the junction, while the gate is located in the center of the junction. The gate voltage is used to control the current flow between the source and drain. When the gate voltage is zero, the device is off; when the gate voltage is above a certain threshold, current flows through the device. This is called the enhancement mode of operation.

The IXTA160N10T7 is optimized for fast switching speed and power consumption. At 32V, its switching speed is rated at 4.5ns. The device has a low gate-source capacitance of 35pF and high transconductance of 70mS. It also has a low gate-drain capacitance of 15pF. This makes it ideal for switching applications that require high-speed performance and low power consumption.

The IXTA160N10T7 is also optimized for high-current operation with a pulse source current rating of 10A peak. It has a low on-resistance of 0.055 Ohm, which enables a higher current flow. Its low thermal resistance of 2.3K/W makes it suitable for applications that require low thermal dissipation. The device has a low threshold voltage of 4V and ESD rating of 2KV.

The IXTA160N10T7 is an ideal choice for power supply, automotive, and industrial applications that require high performance and fast switching speeds. It can be used for applications such as high-efficiency power supplies, DC-DC conversion, motor controls, and power switches. Its low on-resistance, high pulse source current rating, and high transconductance enable it to perform reliably in high-current environments. Its low threshold voltage makes it suitable for low-voltage applications.

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