IXTA110N055T7

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTA110N055T7 is a field-effect transistor (FET) manufactured by IXYS Corporation, a global leader in power semiconductors and advanced electronic components. The IXTA110N055T7 is a high-voltage field-effect transistor (FET) that is specifically designed to meet the needs of high-power applications, such as switching power supplies, DC/DC converters, and network and wireless point-to-point applications.

The IXTA110N055T7 is a single N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) with a rated drain-to-source current at 25°C of 125 amps. It is designed for use in high-voltage, high current switching and amplifier applications that require high voltage and power enhanced device performance. The device has a maximum drain-to-source voltage (VDS) of 120 volts, a drain to source on resistance (RDS(ON)) of 2.8 milli-ohms, and a continuous drain-current at 25°C of 110 amps. It also features a maximum avalanche energy of 1.7mJ.

The IXTA110N055T7 employs a vertical double-diffused MOSFET (VDMOS) technology which offers a number of advantages, such as low conduction loss and higher breakdown voltage, when compared to the conventional low-voltage MOSFETs. This VDMOS FET also has the advantage of improved on resistance (RDSON).

The IXTA110N055T7 is housed in a D2PAK (TO-263AB) package, which is designed with a low footprint and a high thermal performance. The FET has a thermal resistance of 2.5°C/W from junction-to-ambient and 4.3°C/W from junction-to-case. This allows for a better heat dispersion during operation and hence an improved reliability.

The IXTA110N055T7 is widely used in applications such as solar inverters, automotive onboard chargers, DC/DC converters and motor drives. It is also suitable for in high-current power supply converters, audio amplifiers, high-frequency DC/DC converters, and high voltage flyback topologies.

The working principle of an FET is explained as the current flow of charge carriers (electrons or holes) through a semiconductor channel is modulated by a controlling voltage-sensitive field at the gate terminal. In an N-channel MOSFET, the flow of electrons is controlled by a voltage applied to the gate. The device acts as an insulated electrical connection between the source and drain terminals when the gate voltage is near zero. When a positive gate voltage is applied, a conducting channel of electrons is formed through the MOSFET, and current flows from the source to the drain.

The IXTA110N055T7 is characterized by a high junction temperature for a large temperature range, high drain breakdown voltage, improved on-state resistance, and lower conduction loss. All of these features make the IXTA110N055T7 a suitable choice for high voltage and power-enhanced applications where a fast and efficient power switch is required.

The specific data is subject to PDF, and the above content is for reference