Allicdata Part #: | IXTA130N065T2-ND |
Manufacturer Part#: |
IXTA130N065T2 |
Price: | $ 1.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 65V 130A TO-263 |
More Detail: | N-Channel 65V 130A (Tc) 250W (Tc) Surface Mount TO... |
DataSheet: | IXTA130N065T2 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.71158 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 6.6 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 65V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA130N065T2 is a type of Field Effect Transistor (FET) that has a single gate. It is used in a variety of applications, such as power conversion units, motor controllers and automotive devices. The IXTA is manufactured using advanced technologies, which results in an extremely low on-resistance and a wide operating temperature range.
A FET works by using an electric field produced by a voltage applied to the gate to control the current flowing through the source and drain terminals. The source and drain form two distinct regions on the surface of a semiconductor wafer, and the gate electrode is sandwiched between them. When the gate voltage is increased, it attracts electrons from the source region to the gate electrode, which reduces the resistance between the source and the drain. This allows current to flow between the two regions, resulting in a switch-like action.
The IXTA130N065T2 is a low-cost, low-power FET that is suitable for use in a variety of applications. For example, it can be used in switching power supplies, motor drives and automobile electronic equipment. Its features include an absolute maximum ratings of 85°C junction temperature, 20A Drain Current, −55V Drain Voltage and a voltage breakdown of 400V drain-to-source. The on-resistance of the IXTA130N065T2 is a very low 65mOhm, making it suitable for use in high-power applications.
The IXTA130N065T2 also features an advanced high-speed design that allows for operation speeds of up to 12MHz. This makes it suitable for use in high-speed switching applications, such as in motor control and power supplies. The device also has an improved dielectric isolation, which allows for reliable operation even in extremely harsh environments.
In summary, the IXTA130N065T2 is a versatile and reliable single-gate FET that is suitable for a variety of applications. It offers a low on-resistance, a wide operating temperature range, fast switching speeds and improved dielectric isolation, which makes it an ideal choice for power conversion units, motor controllers and automotive devices.
The specific data is subject to PDF, and the above content is for reference
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