Allicdata Part #: | IXTA90N075T2-ND |
Manufacturer Part#: |
IXTA90N075T2 |
Price: | $ 1.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 90A TO-263 |
More Detail: | N-Channel 75V 90A (Tc) 180W (Tc) Surface Mount TO-... |
DataSheet: | IXTA90N075T2 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.50331 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3290pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA90N075T2 is an N-Channel Enhancement Mode MOSFET that is widely used for switching and amplifying electronic signals. This transistor is designed to work with very low gate-source voltage, which gives it a large amount of input impedance. This makes it suitable for low input, low output current applications.
The IXTA90N075T2 is widely used in audio amplifiers, motor control systems, switching power supplies, and power converters. It is typically used to replace BJTs in high-performance circuits. It is widely used in radio-frequency (RF) applications such as switching regulators, power amplifiers, and antenna amplifiers.
The IXTA90N075T2 uses a metal-oxide-semiconductor field-effect transistor (MOSFET) as its active element. This is a type of field-effect transistor (FET) where the gate electrode is separated from the channel by an insulating layer of oxide. This provides a greater degree of control over the current flowing through the channel, making it ideal for switching applications.
The IXTA90N075T2 has an operating temperature range of -55˚C to +150˚C and can handle a total power dissipation of up to 2000 Watts. It works on a standard 12V source and has a drain-source breakdown voltage of 90V. The IXTA90N075T2 has a maximum drain current of 750mA. The on-state resistance of this transistor is very low (1.55Ω).
The principle of operation of the IXTA90N075T2 MOSFET is based on the modulation of a conductive channel between the source and the drain by an electric field. When a positive voltage is applied to the gate, an electric field is created which modulates the conductivity of the channel. This allows for controlled current conduction between the source and the drain.
When no gate voltage is applied, the MOSFET operates in the off-state and there is no current flow. This makes it suitable for making or breaking a circuit, as well as for regulating the current flow in various types of switching applications. The IXTA90N075T2 is also used in digital logic, such as in the OR and AND gates of logic circuits.
In summary, the IXTA90N075T2 is an N-Channel Enhancement Mode MOSFET that is widely used for switching and amplifying electronic signals. It is ideal for low input, low output current applications and its operating temperature range and power dissipation make it suitable for a wide range of applications. The IXTA90N075T2 works on the principle of modulation of conductivity of a channel between the source and the drain by an electrical field.
The specific data is subject to PDF, and the above content is for reference
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