IXTA3N100D2

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The IXTA3N100D2 is a single enhancement mode N-channel power transistor. It belongs to a family of N-type metal-oxide-semiconductor field-effect (MOSFET) transistors that are designed for power applications. It is suitable for use in applications such as power switching, power supplies and DC-to-DC converters. The IXTA3N100D2 is released by NXP Semiconductors, a semiconductor company. It is widely used in many electronic devices and systems.

An N-channel MOSFET is a three terminals electronic device, composed of source, gate and drain. It is built to control the flow of electrons between source and drain when a voltage is applied on the gate. The IXTA3N100D2 has a drain-source breakdown voltage of 600 volts, a drain current of 91.5 amperes (at 25°C) and a continuous drain current of 30 amperes. It is capable of generating nearly 8 watts of dissipation and can handle up to 10 watts of power. Its configuration allows it to have a static drain-source on-resistance of 0.0003 ohms.

The IXTA3N100D2 is a surface-mount single N-channel MOSFET that can be used in a wide range of applications. It is commonly used for power switching circuits in automotive, lighting, AC-DC converters, power supplies and DC-DC converters. It can also be used as a switch or an amplifier in circuits that require low on-resistance and high power capability. As it is designed for use in high frequency applications, it is also suitable for RF applications. It is also useful in power management in video game consoles, computers and other devices.

The working principle of the IXTA3N100D2 is based on the concept of field-effect. By applying a voltage on the gate of the MOSFET, an electric field gets set up. This electric field affects the conductive layer between source and drain. As the voltage changes, the current between source and drain changes accordingly. This effect can be used to control the power flow from source to drain, making the IXTA3N100D2 an ideal choice for power management and power switching applications.

The IXTA3N100D2 is designed for use in extreme environmental conditions. It is capable of operating in wide temperature ranges and can handle high pulse current levels. Its low RDS (on) and NFET properties make it suitable for both low and high voltage switching applications. It is RoHS compliant and UL certified, making it a suitable choice for many industrial and consumer applications.

The IXTA3N100D2 is a high performance power transistor that is suitable for a wide range of applications. From power switching in automobiles to managing power in video game consoles, it is a reliable choice. Its low on-resistance and high power capability make it ideal for applications such as switching, amplifying and RF applications. Understanding its working principle, as well as its features, is essential in order to properly select and utilize this MOSFET in any application.

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