Allicdata Part #: | IXTA3N110-ND |
Manufacturer Part#: |
IXTA3N110 |
Price: | $ 4.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1100V 3A TO-263 |
More Detail: | N-Channel 1100V 3A (Tc) 150W (Tc) Surface Mount TO... |
DataSheet: | IXTA3N110 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.68411 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 1100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA3N110 is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is capable of providing low on-resistance and very low gate charge. It has a low thermal resistance and high-current handling capacity, which makes it ideal for a variety of application fields. This article will focus on its application field and working principle.
Application Fields
The IXTA3N110 is a versatile MOSFET and can be used in a wide range of applications in various industries. Its pinted-source single MOSFETs technology can provide excellent performance and reliability in various applications, such as DC/DC converters, high-frequency switching amplifiers, LEDs, and power supply circuits. In addition, it\'s suitable for automotive applications, and can be used in automotive intelligent infotainment systems, industrial controls, and wireless communication devices.
Working Principle
The working principle of a single MOSFET is based on a simple electric field effect. A MOSFET consists of a channel and two terminals, which are called the source and drain. A gate terminal is provided between the channel and the source and drain terminals. Applying a voltage to the gate controls the channel, allowing current to flow from the source to the drain. When a reverse voltage is applied, the gate voltage prevents current from flowing. In the IXTA3N110, the gate source is provided with a voltage of 5-12 volts, and the source-drain voltage is 12-17 volts, which are much lower than that in a conventional MOSFET.
The IXTA3N110 features extremely low gate charge and on-resistance. This makes it suitable for use in high-frequency switching applications, where the switching speed of the MOSFET is extremely important. The IXTA3N110 also has high-current handling capacity, making it suitable for use in power supply circuits where a large amount of current needs to be switched.
The IXTA3N110 is also extremely reliable and has a long lifetime. This makes it suitable for use in harsh operating environments, such as automotive applications. The IXTA3N110 can also withstand temperatures up to 175 degrees Celsius. This makes it suitable for high-temperature environments, such as industrial controls.
Conclusion
The IXTA3N110 is a versatile and reliable single MOSFET that can be used in a variety of application fields, such as DC/DC converters, high-frequency switching amplifiers, LEDs and power supply circuits, automotive applications, industrial controls, and wireless communication devices. Its features, such as low on-resistance and low gate charge, make it ideal for high-frequency switching applications. In addition, its high-current handling capacity and high operating temperature make it suitable for use in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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