Allicdata Part #: | JAN2N6784U-ND |
Manufacturer Part#: |
JAN2N6784U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 18-LCC |
More Detail: | N-Channel 200V 2.25A (Tc) 800mW (Ta), 15W (Tc) Sur... |
DataSheet: | JAN2N6784U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/556 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 2.25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 800mW (Ta), 15W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Package / Case: | 18-CLCC |
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JAN2N6784U is a lateral N-channel enhancement mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This transistor is capable of operating as a switch that can turn on and off an electrical current in circuits. The device is specially designed to offer low drain to source resistance and can support higher drain voltage.
In the case of the JAN2N6784U MOSFET, it is a detailed version of the 2N6784 MOSFET. It is a lateral N-channel enhancement mode device and consists of five electrical networks. These networks include the semi-conductor substrate layer, the gate oxide, the gate network, the source network, and the drain network. The semi-conductor substrate is made of silicon and the drain, source and gate networks terminals are connected to the top surface of the semiconductor.
The working principle of the JAN2N6784U MOSFET is based on the movement of electrons from one source to the other. The gate of the MOSFET acts as a barrier between the source and the drain. When external electric energy is applied, the free electrons move towards the drain and supply current to the drain network. When the voltage applied is low, the gate acts as an insulating barrier and prevents the flow of current.
JAN2N6784U MOSFET is used in applications such as power switching, audio amplification, and high side switching. It is ideal for use in applications where low drain to source resistance and high drain voltage is required. The device can operate up to 20A of continuous drain current at a voltage of 400V, making it an ideal choice for applications that require high voltage and high current. Its low gate capacitance value and high switching speed makes it suitable for applications that require quick response.
The JAN2N6784U MOSFET can also be used in applications such as motor control, small motor driver, and switching circuits. The device offers high input impedance and provides protection from reverse current flow. Its unique dual field gap architecture provides superior performance, superior reliability and superior vibration immunity, making it an excellent choice for applications that require long life and efficient operation. It can also be used as a switching device in audio and power applications.
The JAN2N6784U MOSFET is a reliable, efficient, and cost-effective device suitable for many different applications. Its superior performance, superior reliability and superior vibration immunity make it a popular choice for many electrical applications. It offers a high input impedance and can be used as a switching device in audio and power applications. Its low gate capacitance value and high switching speed make it an ideal choice for applications that require quick response.
The specific data is subject to PDF, and the above content is for reference
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