JAN2N6788 Allicdata Electronics
Allicdata Part #:

JAN2N6788-ND

Manufacturer Part#:

JAN2N6788

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH TO-205AF TO-39
More Detail: N-Channel 100V 6A (Tc) 800mW (Tc) Through Hole TO-...
DataSheet: JAN2N6788 datasheetJAN2N6788 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: Military, MIL-PRF-19500/555
Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The JAN2N6788 is an N-channel MOSFET that is a member of a family of JANTX- and JANTXV-qualified transistors designed for high-speed switching applications. It is manufactured from a proprietary vertical DMOS process and provides an excellent on/off current ratio, high speed switching, and low on-resistance at a low cost. This makes it an ideal choice for high efficiency switched mode power supplies, DC-DC converters, and digital switching in high-power applications.

The JAN2N6788 is a single-channel MOSFET with a drain current rating of 3.0A. It is capable of dissipating up to 350W of power, making it well-suited for high-power applications. The gate-source breakdown voltage is 25V, while the drain-source breakdown voltage is 175V. It also has a maximum operating junction temperature of 175°C.

In terms of operating principle, the JAN2N6788 is a voltage-controlled transistor. It works by having the applied voltage between the gate and the source of the MOSFET control the conductivity of the transistor. When a positive voltage is applied to the gate, it creates an inversion layer in the region between the gate and the source, allowing the MOSFET to become conductive when there is a positive voltage difference between the source and the drain. Conversely, when there is a negative voltage difference between the source and the drain, the MOSFET will switch to the off state.

The JAN2N6788 is a highly versatile MOSFET and has a variety of applications in fields such as power supplies, DC-DC converters, and motor control. It can be used to regulate the flow of electrical current in digital logic circuits, allowing electricity to be switched on or off depending on the state of the logic. Additionally, it can be used in high-power applications such as switched-mode power supplies and motor control, where it is used to rapidly switch on and off currents at high frequencies. In such applications, the fast switching speed and low on-resistance of the JAN2N6788 make it an ideal choice.

The JAN2N6788 is a reliable, cost-effective MOSFET and is an excellent choice for high-power applications where speed and efficiency are of the utmost importance. With its high speed switching, low on-resistance, and low cost, the JAN2N6788 is an ideal solution for a variety of power management and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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