Allicdata Part #: | JAN2N6800U-ND |
Manufacturer Part#: |
JAN2N6800U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 18-LCC |
More Detail: | N-Channel 400V 3A (Tc) 800mW (Ta), 25W (Tc) Surfac... |
DataSheet: | JAN2N6800U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/557 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34.75nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 800mW (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Package / Case: | 18-CLCC |
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The JAN2N6800U is a type of discrete field effect transistor. This type of transistor is classified as a single field effect transistor (FET). First introduced in the early 1970s, FETs are used to amplify or switch electronic signals. As one of the most common components used in electronic circuits, a FET is composed of four main terminals, Gate, Source, Drain, and Substrate.
The JAN2N6800U is a depletion-mode enhancement-mode MOSFET. This type of MOSFET is built differently than other MOSFETs and has a higher input impedance than most. The JAN2N6800U has a moderate switching speed with very low output capacitance and comes in a plastic dual-in-line package (PDIP). This device is especially popular in audio circuits and other systems where a low-cost and reliable transistor is needed.
The JAN2N6800U can be used in many different applications, such as switching, audio amplifier, high voltage, and very low voltage circuits. In addition, due to its low on-resistance, the device can be used for current control in switching regulator circuits.
The working principle of the JAN2N6800U is the same as with other FETs. A FET consists of a semiconductor substrate with a metal-oxide-semiconductor (MOS) channel. This channel is sandwiched between two highly doped regions called the source and drain. When a voltage is applied to the gate, then the MOS channel will either be in an enhanced or depleted form. In the enhanced form, there is low resistance between the drain and source, allowing current to flow. In the depletion form, the resistance increases, and the current is prevented from flowing.
The JAN2N6800U has some advantages compared to other FETs. The device has a low on-resistance (Rds) and low gate voltage threshold, which makes it ideal for low-voltage and high-current applications. In addition, the device has a low noise and distortion level, making it suitable for use in audio circuits. Furthermore, the device is available in small packages, making it ideal for use in portable applications.
In conclusion, the JAN2N6800U is a type of single field effect transistor (FET). The device has a moderate switching speed, low capacitance, low on-resistance, and low gate voltage threshold. Due to these characteristics, it is often used in high-current and audio applications. In addition, the device is available in small packages, making it suitable for mobile and portable applications.
The specific data is subject to PDF, and the above content is for reference
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