Allicdata Part #: | JAN2N6849U-ND |
Manufacturer Part#: |
JAN2N6849U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET P-CH 18-LCC |
More Detail: | P-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Surf... |
DataSheet: | JAN2N6849U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/564 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 320 mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34.8nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 800mW (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Package / Case: | 18-CLCC |
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The JAN2N6849U is a FET (field-effect transistor) with a single enhancement-mode design specifically intended for high-voltage and low-noise operations. It is manufactured from the N-channel silicon junction construction to provide fast switching speeds and a low on-resistance operation. It is widely used in various applications including RF, wireless communications, and video transmission. In this article, we shall take a closer look at the application field and working principle of the JAN2N6849U FET.
Application Fields
The JAN2N6849U FET is widely used in a variety of applications due to its high-voltage and low-noise operation. Some of the most common applications of the JAN2N6849U include:
- Linear power regulators: The JAN2N6849U is often used to make linear power regulators to monitor both voltage and current in various systems.
- Motor drive circuits: The JAN2N6849U can be used to design motor drive circuits as it is able to handle high voltage and current. It is often used in motor-controlled systems like Remotely Operated Vehicles (ROVs).
- Power management systems: The JAN2N6849U is suitable for use in power management systems as it is able to provide fast switching speeds while having low on-resistance values.
- RF, wireless communications, and video transmission: The JAN2N6849U FET is ideal for use in projects related to RF, wireless communications, and video transmission due to its high-voltage and low-noise operation.
Working Principle
The JAN2N6849U is a FET (field-effect transistor) with a single enhancement-mode design. Unlike BJT (Bipolar Junction Transistors), FETs are voltage-controlled and are "on" when their gates are energized. The JAN2N6849U FET is manufactured from the N-channel silicon junction construction. FETs are normally used to switch current from one point to another, due to their very low on-resistance values. When the gate of the JAN2N6849U FET is energized, the resistance between the source and the drain drops significantly, allowing current to flow freely between them. Therefore, the current flow is controlled by the gate voltage, making FETs ideal for high-voltage and low-noise operations.
Conclusion
The JAN2N6849U FET has a wide range of applications. Due to its high-voltage and low-noise operation, it is widely used in RF, wireless communications, and video transmission, as well as in linear power regulators, motor drive circuits, and power management systems. It is also manufactured from the N-channel silicon junction construction, providing it with fast switching speeds and a low on-resistance operation. Therefore, the JAN2N6849U FET is an ideal device for a variety of applications and is sure to remain popular for many years to come.
The specific data is subject to PDF, and the above content is for reference
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