Allicdata Part #: | JAN2N7225U-ND |
Manufacturer Part#: |
JAN2N7225U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-267AB |
More Detail: | N-Channel 200V 27.4A (Tc) 4W (Ta), 150W (Tc) Surfa... |
DataSheet: | JAN2N7225U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/592 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 27.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 27.4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-267AB |
Package / Case: | TO-267AB |
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JAN2N7225U Application Field and Working Principle
The JAN2N7225U is a high-performance Junction Field Effect Transistor (JFET) that relies on a junction between the gate and N-Channel region to control current. It is designed to minimize noise, reduce distortion in the signal path, increase dynamic range, provide high-speed operation, and offer superior power handling capabilities. The JAN2N7225U devices include an N-Channel region in the Gate and Source terminals. When the Gate bias is applied to the junctions, it alters the barriers between the N-Channel region, allowing current to flow from the Gate to the Source.
The JAN2N7225U is designed for applications requiring low-noise, high-speed, high gain, and low distortion in a variety of signal processing stages such as audio amplifiers, pulse waveform and linear amplifiers, and various other audio applications, as well as switching applications.
Applications of JAN2N7225U
The JAN2N7225U is most commonly used in circuits that require high speed, low distortion, low-noise performance. It is ideal for audio or low-frequency applications, where its low-noise design helps reduce distortion and noise that are common with other devices. It is also ideal for use in pulse waveform and linear amplifiers and switching applications.
In addition, the JAN2N7225U is well suited for use in a variety of signal-processing stages and provides superior dynamic range, power handling capabilities, and high-speed performance. As a result, it is suitable for use in a variety of applications, such as preamplifiers, audio processing systems, signal conditioners, and power amplifiers.
Working Principle of JAN2N7225U
The working principle of the JAN2N7225U is based on the junction that exists between the Gate and the N-Channel region of the device. When the Gate bias is applied to the junction, it creates a junction barrier that restricts the current flow from the Gate to the Source. This junction barrier can be altered by changing the Gate bias, and thus the current flow from the Gate to the Source can be controlled.
The JAN2N7225U includes a bias network, which can be used to control the Gate bias, and thus the current flow from the Gate to the Source. The bias network includes a voltage divider, which divides the supply voltage across two resistors to create the Gate bias. The Gate bias can then be adjusted by changing the values of the two resistors in the voltage divider circuit.
By altering the Gate bias, the current flow from the Gate to the Source can be controlled, allowing the JAN2N7225U to be used for a wide range of applications. In addition, the JAN2N7225U can be used to control the current through the N-Channel region and thus switching applications, such as audio amplifiers, pulse waveform and linear amplifiers, and other audio applications.
The specific data is subject to PDF, and the above content is for reference
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