Allicdata Part #: | JAN2N7228U-ND |
Manufacturer Part#: |
JAN2N7228U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-267AB |
More Detail: | N-Channel 500V 12A (Tc) 4W (Ta), 150W (Tc) Surface... |
DataSheet: | JAN2N7228U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/592 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 515 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-267AB |
Package / Case: | TO-267AB |
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JAN2N7228U Application Field and Working Principle
The JAN2N7228U is a N-channel, moderate voltage field-effect transistor (MOSFET). It is widely used in applications that require switching, power management, and driving loads. Understanding the basic working principle and application of this MOSFET is important for anyone looking to use it in a project.
An Overview of the JAN2N7228U
The JAN2N7228U is a 60V N-channel MOSFET which has a maximum drain-source breakdown voltage (BVDSS) of 60V and a drain-source on-state resistance (RDS(on)) of only 2.5mΩ. Its low on-state resistance enables higher power transmission. It is designed with a fast switching time and low capacitance, making it suitable for high-frequency switching and giving the MOSFET a minimum operating frequency of 1.5Mhz. Additionally, the device has an absolute maximum drain current of 16A, making it suitable for applications that require high current. Its various features make it ideal for use in applications that require high power delivery, such as automotive systems and industrial motor control. All these characteristics make it a popular choice for power MOSFETs.
MOSFET Working Principle
MOSFETs, like the JAN2N7228U, use the principle of a majority carrier injection current to conduct current from the source to the drain. The metal-oxide-semiconductor (MOS) junction creates an electric field between the drain and the source. A finite potential barrier is created which separates a less-conductive region from a more-conductive region. The electric field acts as a gate which allows current to flow between the two regions by increasing the electrostatic pressure. As the voltage applied to the gate increases, the electric field between the drain and source becomes significantly larger, allowing more current to flow. This allows the MOSFET to be switched on and off, depending on the voltage applied to its gate.
MOSFET Applications
MOSFETs like the JAN2N7228U are used in a wide variety of applications. They are used for controlling high-current loads, such as in automotive and industrial applications. They are also used in switching circuits, power converters, and relay switches. Additionally, they are used in low-noise amplifiers. The low on-state resistance of the JAN2N7228U makes it ideal for high-power applications that require a low resistance. It also makes it a good choice for switching applications, as it can operate at high frequencies with minimal power loss.
Conclusion
The JAN2N7228U is a 60V N-channel MOSFET designed for use in high-power applications. Its low on-state resistance of 2.5mΩ makes it ideal for applications that require high current delivery. Its fast switching time and low capacitance also make it suitable for high-frequency applications. The MOSFET operates on the principle of a majority carrier injection current, where a finite potential barrier is created between the source and drain. This allows current to be conducted from the source to the drain by increasing the electrostatic pressure. The JAN2N7228U is widely used in automotive and industrial applications, as well as in low-noise amplifiers, switching circuits, and relay switches.
The specific data is subject to PDF, and the above content is for reference
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