Allicdata Part #: | JAN2N6758-ND |
Manufacturer Part#: |
JAN2N6758 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-204AE TO-3 |
More Detail: | N-Channel 200V 9A (Tc) 4W (Ta), 75W (Tc) Through H... |
DataSheet: | JAN2N6758 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/542 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 490 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 4W (Ta), 75W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-204AA (TO-3) |
Package / Case: | TO-204AA, TO-3 |
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The JAN2N6758 is a vertical (or planar) Diffused Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a N-Channel MOSFET which is a type of FET where the type of conduction is inductive. The N-channel has a voltage range from +15V to -200V and can operate at a maximum current of 10A. It is intended for use as a switching device for medium-to-large-sized power applications.
A MOSFET consists of four regions: source (S), drain (D), body (B), and the gate (G). The gate is where majority of the control is done. By applying a voltage between the gate and source (VGS), one can control current flow from the drain to the source (ID). The JAN2N6758 is designed in such a way that when VGS is sufficiently high (met a certain threshold) ID is turned “on”. When VGS is sufficiently low, ID is turned “off”.
The JAN2N6758 is primarily used in power switch applications. When used as a switch, it can either turn “on” or turn “off” a system. This can be used in various systems from small circuits to large-scale industrial power switches. It is also used as a rectifier-for converting AC current to a DC current. It is also capable of operating in the reverse direction acting as an ideal diode.
The JAN2N6758 can be used in higher frequency circuits such as radio frequency (RF) power amplifiers due to its high gain and fast switching capabilities. It is able to handle higher power levels that are necessary for such circuits. It is also capable of isolating high-frequency noise, making it ideal for digital communication links.
When used in applications, there needs to be proper heat sinking in order to ensure that the device doesn’t exceed its maximum temperature rating. This is due to the high current flow through the device when it is on. Without proper cooling it is easy for the device to overheat, leading to permanent damage and even circuit failure.
The JAN2N6758 is an efficient and reliable MOSFET which has enabled the design of various power supply solutions. It is capable of providing a reliable, high-performance option for medium-to-large-sized power switching applications. With proper heat sinking, it is capable of providing reliable and consistent operation for a variety of applications. This makes it ideal for a large range of power switching needs.
The specific data is subject to PDF, and the above content is for reference
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JAN2N6796 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6796U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6798 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6798U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6800 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
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