Allicdata Part #: | JAN2N6762-ND |
Manufacturer Part#: |
JAN2N6762 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-204AE TO-3 |
More Detail: | N-Channel 500V 4.5A (Tc) 4W (Ta), 75W (Tc) Through... |
DataSheet: | JAN2N6762 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 4W (Ta), 75W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-204AA (TO-3) |
Package / Case: | TO-204AA, TO-3 |
Series: | Military, MIL-PRF-19500/542 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
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JAN2N6762 is a silicon junction field-effect transistor (JFET) commonly used in circuit applications such as audio preamplifiers, oscillators, mixers, switching circuits, and power supplies. The device is available in a bipolar package with an operating temperature range of -65°C to 150°C and a maximum collector power dissipation of 500mW.
JAN2N6762 is a depletion-type, junction field-effect transistor. The term "depletion" refers to a type of junction field-effect transistor in which the gate is reverse-biased. Reverse-biasing the gate creates a depletion region in the channel that effectively reduces or prevents current flow. This device has two types of junctions: the gate-source junction and the drain-source junction. The gate-source junction supports the depletion region, while the drain-source junction supports the channel.
The working principle of JAN2N6762 is based on the principle of modulation or gain control by changing the amount of current flowing in the channel through the application of a reverse bias voltage to the gate. This reverse bias voltage modulates the channel width, thereby controlling the current that flows from the drain to the source. As the gate bias is increased, the channel width becomes narrower and the current flow is reduced. This can be used to regulate the output voltage or power of the circuit.
JAN2N6762 has several advantages over other types of field-effect transistors. It is a unipolar device, meaning it does not rely on electron-hole pairs to switch between a conducting and a non-conducting state. As a result, it has low power consumption and is capable of high switching speed. Additionally, it has a low junction capacitance, which makes it suitable for high frequency applications. Finally, it has a high input impedance, making it an ideal choice for signal processing applications.
JAN2N6762 is widely used in many applications because of its excellent characteristics. It is typically used as an adjustable resistor or current limiter in audio preamplifiers, power supplies, and other circuits where a constant or adjustable current is needed. It can also be used as a switching mechanism in circuits such as mixers, oscillators, and phase-locked loops. Additionally, it is often used as a low-noise amplifier for low-level signals due to its low-noise characteristics.
In summary, JAN2N6762 is a versatile and reliable field-effect transistor that is widely used in many circuit applications. It has low power consumption, low junction capacitance, and high input impedance, making it a suitable choice for signal processing, switching, and amplification applications. Additionally, it is available in a bipolar package with a wide operating temperature range, making it an ideal choice for many circuit applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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JAN2N6756 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6758 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
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JAN2N6766 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6766T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N6768 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6768T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
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JAN2N6784 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6784U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6788 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6788U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6790 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6790U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6796 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6796U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6798 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6798U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6800 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6800U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6802 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
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JAN2N7228 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
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