JAN2N6790

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JAN2N6790 is a semiconductor device that belongs to a family of transistors known as field-effect transistors (FETs). Specifically, the JAN2N6790 is a type of metal-oxide semiconductor FET (MOSFET). MOSFETs are a type of transistor which utilizes an insulated gate to control the flow of current between the source and drain terminals. The JAN2N6790 is an enhancement mode MOSFET which means that it will only conduct when a positive voltage is applied to the gate.

The JAN2N6790 is a single-gate MOSFET and is available in a TO-92 package. Its drain-source voltage rating is 125V and its drain current rating is 1.2A. The device has an on-resistance of 90 mΩ when operating in the linear mode and a gate-source voltage range of -20 to +20V. It has a high current gain and is capable of switching signals up to 500kHz.

The primary application for the JAN2N6790 is power switching. It can be used to control the flow of current in a variety of power switching applications such as motor control, lighting, audio amplification, and other applications where switching a large amount of current is required. It can also be used as an active load in circuits where it can be used to control the power dissipated by a load.

In addition to its power switching application, the JAN2N6790 can also be used for signal switching applications. The device can be used to switch signals up to 500kHz, making it ideal for high-frequency applications such as radio transmitters and digital signal processing. Due to its low on-resistance and high current gain, the JAN2N6790 is also well suited for applications requiring low power consumption.

The working principle of the JAN2N6790 involves controlling the flow of current between the source and drain terminals. When a voltage is applied to the gate terminal, it creates an electric field which lowers the width of the channel between the source and drain. This reduces the size of the resistance between the two terminals, allowing current to flow more easily. By controlling the gate voltage, the amount of current that is allowed to flow through the device can be varied.

In summary, the JAN2N6790 is a single-gate MOSFET that is ideal for both power and signal switching applications. It has a drain-source voltage rating of 125V and a drain current rating of 1.2A. It has an on-resistance of 90 mΩ and can switch signals up to 500kHz. It is also suitable for applications where low power consumption is a priority.

The specific data is subject to PDF, and the above content is for reference