JAN2N6764

Rds On (Max) @ Id, Vgs:	65 mOhm @ 38A, 10V
Package / Case:	TO-204AE
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	4W (Ta), 150W (Tc)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	125nC @ 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Series:	Military, MIL-PRF-19500/543
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	38A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Bulk

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The JAN2N6764 is a silicon N-Channel junction field-effect transistor (JFET) that is commonly used in different applications. It is used in audio amplifying, low-power switching, and other low-frequency circuits. This particular device is made using a junction gate structure, and it can operate at a maximum frequency of 1 MHz.The JAN2N6764 transistor has the following: a maximum transistor gain (hfe) of 30, a collector-emitter breakdown voltage (BVceo) of 30 volts, and a continuous drain current rating of 30 milliamps at 25 degrees Celsius. Additionally, the forward transfer admittance (yfs) is 10 millimhos (mho) at 250 milliamperes, and the drain-source breakdown voltage (BVdss) is rated at 50 volts. Furthermore, the maximum power dissipation is rated at 0.25 watts.

Working Principle of the JAN2N6764 Transistor

The JAN2N6764 transistor is a junction field-effect transistor (JFET). It works on the principle that current flowing in one direction through two adjacent layers of semiconductor material generates an electric field, which can be used to control the current flowing in the other direction.In the JAN2N6764 device, the two layers of semiconductor material are configured so that the electric field generated by the applied current creates a channel between the two layers. This channel can then be used to control the current flowing in the other direction, which is known as the drain-source current.The electric field generated by the applied current is controlled by the voltage applied to the gate, which is connected to the two layers of semiconductor material. When the gate voltage is increased, the electric field increases, which in turn increases the amount of current flowing between the drain and the source. Conversely, when the gate voltage is decreased, the electric field decreases, which in turn decreases the amount of current flowing between the drain and the source.

Applications of the JAN2N6764 Transistor

The JAN2N6764 transistor is mainly used in audio amplifying, low-power switching, and other low-frequency circuits. One of the main advantages of this device is its low power dissipation, which makes it well-suited for use in low-voltage, low-power applications. This makes it ideal for use in battery-powered circuits, where energy efficiency is important.In addition, the JAN2N6764 transistor is also used for precision levels such as gain control and high-impedance signal buffering. The low noise characteristics of the JAN2N6764 can also make it a good choice for low-noise signal amplification and switching.Finally, the JAN2N6764 transistor is often used in power management circuits, where it can be used to control the power supply of a circuit. By using the JAN2N6764 transistor, it is possible to regulate the power output of a circuit and increase or decrease the voltage or current as needed.

Conclusion

In conclusion, the JAN2N6764 transistor is a versatile device that can be used in a variety of applications. As it is a junction field-effect transistor (JFET), it can be used to control the current flowing between the drain and the source. Furthermore, it has low power dissipation characteristics and is suitable for use in low-voltage, low-power applications. Additionally, the JAN2N6764 transistor can also be used for precision level applications, low-noise signal amplification, and power management circuits.

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