Allicdata Part #: | JAN2N7224-ND |
Manufacturer Part#: |
JAN2N7224 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-254AA |
More Detail: | N-Channel 100V 34A (Tc) 4W (Ta), 150W (Tc) Through... |
DataSheet: | JAN2N7224 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/592 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 81 mOhm @ 34A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-254AA |
Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
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The JAN2N7224 is a field-effect transistor (FET) designed for use in high power applications. It is a single N-channel Mosfet, meaning that it can control a single voltage or current. The JAN2N7224 is able to switch high loads with current ratings of 8 amps and voltage ratings of as much as 250 volts.
This FET is particularly popular in motor control applications. It can be used to switch motors, generators, and other high-amperage devices on and off. It can also be used for many other kinds of devices, including relays, motors, and transformers.
The JAN2N7224 is based on the vertical double-diffused MOS (VDMOS) technology. VDMOS transistors feature a very high current-handling capability and an outstanding immunity against thermal breakdown. Additionally, it is designed to produce very low gate-source voltage and threshold voltages, while providing excellent output voltage and current gains.
The JAN2N7224 operates on a simple working principle. When a voltage is applied to the gate of the FET, it creates an electrostatic field that attracts electrons to the gate. This creates an inversion of the FET\'s channel, which then causes the device to conduct. When the gate voltage is removed, the electrons immediately scatter, and the FET shuts off.
The JAN2N7224 is built using low-voltage and low-power techniques, allowing it to be more efficient than analog devices. Additionally, it can be easily integrated into high-power switching systems due to its ability to switch high loads with low power consumption. This makes it an ideal choice for applications where high power is required, such as motor control applications.
In conclusion, the JAN2N7224 is a single N-channel Mosfet that is suitable for a wide range of high power applications. It operates on a simple working principle, and is designed to switch high loads with low power consumption. It is an efficient switching device that can be integrated easily into high-power systems.
The specific data is subject to PDF, and the above content is for reference
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