Allicdata Part #: | JAN2N6798U-ND |
Manufacturer Part#: |
JAN2N6798U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 18-LCC |
More Detail: | N-Channel 200V 5.5A (Tc) 800mW (Ta), 25W (Tc) Surf... |
DataSheet: | JAN2N6798U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/557 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 42.07nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 800mW (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Package / Case: | 18-CLCC |
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The JANTX2N6798U is a low-power, high-efficiency N- series semiconductor field effect transistor (FET). Its purpose is specifically designed for local area network (LAN) applications. It operates over a wide voltage range, and its high-precision features make it an ideal choice for critical applications in areas such as power management and communications.
The JANTX2N6798U is a single-pole device, with a high power-handling capacity and a low-drain saturation voltage. It is a high-speed, low-cost device that offers significant advantages over other FETs for use in high-speed data transfer. It also provides excellent screening against unwanted electromagnetic interference (EMI) and radio frequency (RF) signals.
The JANTX2N6798U\'s high-performance, low-power design includes two FETs in a dual-gate configuration. Each FET is connected to a separate gate. This allows it to switch rapidly between low-current and high-current modes, depending on the input voltage. In the low-current mode, the high-speed mode of operation is achieved using high-efficiency switching techniques. The low-power mode offers low-current consumption and improved reliability over time.
The JANTX2N6798U also provides a low-voltage operation, further reducing power consumption. This helps to ensure higher levels of efficiency while maintaining low current consumption. Its high-frequency characteristics also provide good screening from unwanted signals. These features make the JANTX2N6798U an ideal solution for use in local networks, where the device can provide high speed and accurate data transfer.
The working principle of the JANTX2N6798U is based on the principle of ever-depleting layers of charged carriers, or electrons, in a semiconductor material. When a voltage is applied to the FET gates, electrons are pulled from one layer to the other. This creates a channel between the FET gates and the source and drain terminals, allowing current to flow. The current is determined by the voltage and the number of available carriers in the semiconductor material.
The JANTX2N6798U is a reliable and cost-effective solution for LAN applications. Its low-power, high-speed features make it an ideal choice for power management and communications, while its efficient switching and low-voltage operation ensure higher levels of performance. With these features, the JANTX2N6798U is an excellent choice in all areas of LAN applications, providing power and speed benefits in a cost-effective package.
The specific data is subject to PDF, and the above content is for reference
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