Allicdata Part #: | JAN2N6804-ND |
Manufacturer Part#: |
JAN2N6804 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET P-CH 100V 11A TO-3 |
More Detail: | P-Channel 100V 11A (Tc) 4W (Ta), 75W (Tc) Through ... |
DataSheet: | JAN2N6804 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/562 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 4W (Ta), 75W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-204AA (TO-3) |
Package / Case: | TO-204AA, TO-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JAN2N6804 is a type of Single field-effect transistor (MOSFET). It is a three-terminal semiconductor device that uses electric charge to control the flow of electric current. It is an essential component of modern electronics and has found a wide range of applications in virtually all areas of electronics.
Generally speaking, a MOSFET consists of four layers. A substrate layer, a source layer, a drain layer, and a gate layer. Each layer consists of different types of materials that facilitate the flow of electrons within the device. For instance, the source layer contains one type of material that allows the electrons to flow from the drain layer to the substrate layer. The drain layer similarly contains another type of material that allows the electrons to flow from the source layer to the substrate layer. Finally, the gate layer is responsible for controlling the flow of electrons.
In the case of JAN2N6804, the source layer is composed of highly doped n-type silicon, the drain layer is composed of highly doped p-type silicon and the gate layer is composed of doped aluminum. The substrate layer is composed of p-type silicon and is connected to the gate layer. The gate layer is then connected to a voltage \'Vg\' which is the voltage between the gate and the source. The gate voltage is used to control the current flow between the source and the drain.
When the voltage of the gate is increased, it varies the channel resistance from the drain layer to the source layer. This increases the current that is flowing from the drain to the source, allowing for a higher current flow. On the other hand, decreasing the voltage of the gate will reduce the current flow. This is because the channel resistance is decreased, which means that less current is able to flow through it.
The primary application of the JAN2N6804 is as a low voltage/low current switch. This type of switch is often used in order to simplify a circuit that requires multiple switches. One such example is a circuit that requires multiple relays to switch on/off certain loads. By using a MOSFET, a single switch can be used to control multiple relays, thus simplifying the overall design of the circuit.
The JAN2N6804 is also used to create a high voltage/high current switch. This type of switch is useful for applications that require a high voltage/high current to flow through a circuit. One such example is in a home audio system where a high voltage/high current is needed to power the amplifier. The MOSFET can be used to switch on/off the amplifier, thus controlling the amount of current that is flowing to the device.
In addition, the JAN2N6804 can be used as an amplifier in audio equipment. This is because the device is able to amplify the audio signal before it is sent to the speaker. This allows for a clear and powerful sound that is much louder than a normal amplifier. Furthermore, this device is also capable of creating a distortion effect, which is useful in certain types of genres of music.
The JAN2N6804 is an important device for modern electronics and has found many applications in numerous industries. It is a reliable, cost-effective and high-performance device that is capable of providing high levels of performance. It is a valuable part of any electronics project and should be considered whenever a reliable switch or amplifier is needed.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
JAN2N6756 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6758 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6760 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6762 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6764 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6764T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N6766 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6766T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N6768 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6768T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N6770 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-204AE TO-3... |
JAN2N6770T1 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N6782 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6782U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6784 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6784U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6788 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6788U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6790 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6790U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6796 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6796U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6798 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6798U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6800 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6800U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6802 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6802U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6804 | Microsemi Co... | 0.0 $ | 1000 | MOSFET P-CH 100V 11A TO-3... |
JAN2N6849 | Microsemi Co... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.5A TO-... |
JAN2N6849U | Microsemi Co... | 0.0 $ | 1000 | MOSFET P-CH 18-LCCP-Chann... |
JAN2N6901 | Microsemi Co... | -- | 1000 | MOSFET N-CH 100V 1.69A TO... |
JAN2N7224 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N7224U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-267ABN-Cha... |
JAN2N7225 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N7225U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-267ABN-Cha... |
JAN2N7227 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N7227U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-267ABN-Cha... |
JAN2N7228 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-254AAN-Cha... |
JAN2N7228U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-267ABN-Cha... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...