| Allicdata Part #: | JAN2N7236U-ND |
| Manufacturer Part#: |
JAN2N7236U |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET P-CH 100V 18A TO-267AB |
| More Detail: | P-Channel 100V 18A (Tc) 4W (Ta), 125W (Tc) Surface... |
| DataSheet: | JAN2N7236U Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-267AB |
| Supplier Device Package: | TO-267AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 4W (Ta), 125W (Tc) |
| FET Feature: | -- |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Series: | Military, MIL-PRF-19500/595 |
| Rds On (Max) @ Id, Vgs: | 220 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Bulk |
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The JAN2N7236U transistor is a field-effect transistor (FET), which is a type of transistor that utilizes an electric field to control the shape and characteristics of a semiconductor material. It is a single-gate FET that features a uni-polar N-channel FET design and is made with the Schottky diode planar process. It has a maximum drain current rating of 7A, a maximum drain-source voltage rating of 32V, and a power dissipation rating of 10W.
The JAN2N7236U is mainly used in audio equipment, such as amplifiers, where it can be used as an amplifier switch as it can be easily switched on and off. Additionally, it can be used as a voltage-controlled switch, as it can be used to control the output of a signal, allowing for a more varied sound. It can also be used in musical instruments as a peak detector, allowing for the adjustment of the harmonic structure of a signal. Furthermore, this transistor can be used in controllers and in various regulation circuits, such as in regulators and power supplies.
The working principle of the JAN2N7236U is based on the electric field created by the gate terminal, which controls the shape of the semiconductor material. The electric field is created by the gate bias voltage, which is applied to the gate of the transistor. This causes an electric field to be produced around the gate, which affects the majority and minority carriers in the semiconductor, changing their number and thus affecting the output current.
The source terminal is connected to the ground potential, while the drain terminal is connected to the positive power supply. When a gate bias voltage is applied, it alters the shape of the electric field, which in turn affects the output current. The gate-source voltage, called Vgs, is used to control the conductivity of the transistor and its linearity characteristics. The higher the Vgs is, the more current flows from the drain to the source.
The JAN2N7236U is capable of withstanding a large amount of temperature changes, and can operate stably in high temperature environments. This transistor also has a low power consumption, making it ideal for portable devices. Additionally, the transistor has a low body-drain capacitance, thereby increasing its switching speed and making it suitable for high-frequency switching applications.
In conclusion, the JAN2N7236U transistor is a uni-polar N-channel FET. It is mainly used in audio equipment, musical instruments, controllers, regulators, and power supplies as an amplifier switch, voltage-controlled switch, peak detector, or regulator. The electric field created by the gate bias voltage controls the shape of the semiconductor material and thus the output current of the transistor. The JAN2N7236U is capable of withstanding large temperature changes, and has a low power consumption and low body-drain capacitance.
The specific data is subject to PDF, and the above content is for reference
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JAN2N7236U Datasheet/PDF