MAGX-000035-015000

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The MAGX-000035-015000 is a type of Field Effect Transistor (FET) specifically designed for high frequency operation in the range of 1.4-4 GHz. FETs are unipolar transistors with three terminals, the source (S), the gate (G), and the drain (D). It differs from the bipolar transistor in its design, where the voltage applied to the gate terminal controls the current flow between the source and the drain. The Magx-000035-015000 is an enhancement-mode vertical N-Channel MOSFET which functions by using the electric field as opposed to voltage and current of a typical bipolar transistor. This MOSFET has a zero Gate-Source voltage (VGS) threshold which is a useful feature when an amplifier or switch needs to be operated through very low signals. In addition, it has a low capacitance input capacitance and low \'on\' resistance (RDS(on)). The function of the MAGX-000035-015000 is based on the concept of using the electric field to control the current flow. As previously mentioned, it has a zero VGS threshold which allows the current to begin flowing with a Gate-Source voltage lower than the turn-on voltage of the FET. At this point, the Drain current is controlled by the voltage applied to the Gate. The Gate terminal also has an influence on the drain current, with higher voltages increasing the drain current. This device can be used as an amplifier, switch or other complex functions, depending on the application.When the MAGX-000035-015000 is used as a switch, the device is operated in its saturation region. To enter the saturation region the voltage applied to the Gate terminal must exceed the threshold voltage. Once in the saturation region, the current flowing through the device is mainly determined by the Drain-Source voltage and is unrelated to the Gate voltage, hence allowing it to behave as a switch. When used as an amplifier, the MAGX-000035-015000 is operated as a current amplifier, taking advantage of its low on-resistance to control the drain-to-source current.The MAGX-000035-015000 is an ideal device for RF applications such as cellular base stations, microwave point-point links, and other high frequency applications. It functions as a low noise linear amplifier and is able to provide up to 35 mA of current at 3.3 V. It has a very low on resistance of 4 ohms, which provides excellent power efficiency. Additionally, it is highly stable in all operating conditions, maintaining a low capacitance input capacitance and low RDS(on) over its entire operating temperature range.All of these characteristics make the MAGX-000035-015000 an ideal choice for high frequency applications that require a low noise, high power, and stable solution. It is capable of providing excellent performance and is able to endure the demands of high temperatures and signal processing. Its zero gate-source voltage threshold, low input capacitance, and low \'on\' resistance allow it to function as a low noise, high power, and stable solution for a variety of applications.

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